JPS5668032A - Logic circuit - Google Patents
Logic circuitInfo
- Publication number
- JPS5668032A JPS5668032A JP14417379A JP14417379A JPS5668032A JP S5668032 A JPS5668032 A JP S5668032A JP 14417379 A JP14417379 A JP 14417379A JP 14417379 A JP14417379 A JP 14417379A JP S5668032 A JPS5668032 A JP S5668032A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- potential
- low level
- level
- electric power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
- H03K19/01735—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals by bootstrapping, i.e. by positive feed-back
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Shift Register Type Memory (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To increase the operation speed of an inverter circuit, making use of bootstrap capacity, by using depletion MISFET for switching. CONSTITUTION:When input signal phi1 is at a low level and phi2 and phi3 are at a high level, contacts N1' and N2' are held at the low level. Next, as signal phi1 rises up to the high level, the potential of contact N1' can be increased nearly up to electric power source potential Vcc since MISFETQ3' is of the depletion type. The potential of contact N2', on the other hand, can be held at earth potential Vss. Once signal phi2 falls down to the low level, MISFETQ2 is cut off and the potential of contact N2 rises, but since the initial voltage of contact N1' is high, contact N2' can be increased up to the electric power source level rapidly. Consequently, the high-speed inverter circuit can be obtained and this can be made hard to be influenced by the threshold voltage and gate voltage of switching MISFET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14417379A JPS5668032A (en) | 1979-11-07 | 1979-11-07 | Logic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14417379A JPS5668032A (en) | 1979-11-07 | 1979-11-07 | Logic circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5668032A true JPS5668032A (en) | 1981-06-08 |
Family
ID=15355895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14417379A Pending JPS5668032A (en) | 1979-11-07 | 1979-11-07 | Logic circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5668032A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60124120A (en) * | 1983-12-09 | 1985-07-03 | Sony Corp | Bootstrap circuit |
US4725746A (en) * | 1981-10-20 | 1988-02-16 | Kabushiki Kaisha Toshiba | MOSFET buffer circuit with an improved bootstrapping circuit |
JP2012029306A (en) * | 2011-08-23 | 2012-02-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US8212257B2 (en) | 2001-08-10 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013068953A (en) * | 2012-09-26 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2014206741A (en) * | 2014-05-20 | 2014-10-30 | 株式会社半導体エネルギー研究所 | Buffer circuit and semiconductor device |
-
1979
- 1979-11-07 JP JP14417379A patent/JPS5668032A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4725746A (en) * | 1981-10-20 | 1988-02-16 | Kabushiki Kaisha Toshiba | MOSFET buffer circuit with an improved bootstrapping circuit |
JPS60124120A (en) * | 1983-12-09 | 1985-07-03 | Sony Corp | Bootstrap circuit |
US8212257B2 (en) | 2001-08-10 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8586991B2 (en) | 2001-08-10 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8841680B2 (en) | 2001-08-10 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9343485B2 (en) | 2001-08-10 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9601525B2 (en) | 2001-08-10 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2012029306A (en) * | 2011-08-23 | 2012-02-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2013068953A (en) * | 2012-09-26 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JP2014206741A (en) * | 2014-05-20 | 2014-10-30 | 株式会社半導体エネルギー研究所 | Buffer circuit and semiconductor device |
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