JPS6439816A - Delaying circuit - Google Patents

Delaying circuit

Info

Publication number
JPS6439816A
JPS6439816A JP62195504A JP19550487A JPS6439816A JP S6439816 A JPS6439816 A JP S6439816A JP 62195504 A JP62195504 A JP 62195504A JP 19550487 A JP19550487 A JP 19550487A JP S6439816 A JPS6439816 A JP S6439816A
Authority
JP
Japan
Prior art keywords
electrode
potential
type mosfet
source electrode
response speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195504A
Other languages
Japanese (ja)
Inventor
Yuko Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62195504A priority Critical patent/JPS6439816A/en
Publication of JPS6439816A publication Critical patent/JPS6439816A/en
Pending legal-status Critical Current

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  • Pulse Circuits (AREA)

Abstract

PURPOSE:To secure a large delay time by decreasing a response speed of an inverter circuit, by constituting the titled circuit so that the potential related to a source electrode of the inverter circuit drops due to a voltage drop of a first MOSFET. CONSTITUTION:As for a P type MOSFET 11, the gate electrode and the drain electrode are connected to each other, therefore, a potential difference between the source electrode and the drain electrode, and a potential difference between the gate electrode and the secure electrode become equal, and the potential in the drain electrode becomes the potential being lower than by a threshold portion than the power source potential +VDD of the positive electrode connected by the source electrode. Also, when the potential of the source electrode is low, a response speed of the P type MOSFET becomes low. Accordingly, a response speed of a P type MOSFET 12 becomes lower surely than the case when the P type MOSFET 11 does not exist and the source electrode is connected directly to the power source potential of the positive electrode. In such a way, a large delay time can be secured.
JP62195504A 1987-08-05 1987-08-05 Delaying circuit Pending JPS6439816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195504A JPS6439816A (en) 1987-08-05 1987-08-05 Delaying circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195504A JPS6439816A (en) 1987-08-05 1987-08-05 Delaying circuit

Publications (1)

Publication Number Publication Date
JPS6439816A true JPS6439816A (en) 1989-02-10

Family

ID=16342182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195504A Pending JPS6439816A (en) 1987-08-05 1987-08-05 Delaying circuit

Country Status (1)

Country Link
JP (1) JPS6439816A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188904A (en) * 2008-02-08 2009-08-20 Seiko Epson Corp Delay circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188904A (en) * 2008-02-08 2009-08-20 Seiko Epson Corp Delay circuit

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