JPS5666030A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5666030A JPS5666030A JP14252379A JP14252379A JPS5666030A JP S5666030 A JPS5666030 A JP S5666030A JP 14252379 A JP14252379 A JP 14252379A JP 14252379 A JP14252379 A JP 14252379A JP S5666030 A JPS5666030 A JP S5666030A
- Authority
- JP
- Japan
- Prior art keywords
- temperature atmosphere
- impurity
- impurities
- insulating film
- glass layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 11
- 239000011521 glass Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14252379A JPS5666030A (en) | 1979-11-02 | 1979-11-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14252379A JPS5666030A (en) | 1979-11-02 | 1979-11-02 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5666030A true JPS5666030A (en) | 1981-06-04 |
Family
ID=15317332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14252379A Pending JPS5666030A (en) | 1979-11-02 | 1979-11-02 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5666030A (ja) |
-
1979
- 1979-11-02 JP JP14252379A patent/JPS5666030A/ja active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56135969A (en) | Manufacture of semiconductor device | |
JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
JPS5666030A (en) | Manufacture of semiconductor device | |
JPS5683948A (en) | Processing of semiconductor | |
JPS558011A (en) | Semi-conductor device manufacturing method | |
JPS5475273A (en) | Manufacture of semiconductor device | |
JPS5555524A (en) | Method of manufacturing semiconductor device | |
JPS5633840A (en) | Manufacture of semiconductor device | |
JPS55158679A (en) | Manufacture of solar cell | |
JPS5655038A (en) | Diffusing method for impurity into semiconductor wafer | |
JPS5544701A (en) | Manufacturing transistor | |
JPS5728353A (en) | Manufacture of semiconductor device | |
JPS54586A (en) | Production of semiconductor device | |
JPS5544791A (en) | Diffusing method for impurity to 3-5 compound | |
JPS5662366A (en) | Manufacturing of smiconductor | |
JPS5279871A (en) | Production of impurity diffused layer | |
JPS5680158A (en) | Semiconductor device | |
JPS5796567A (en) | Manufacture of semiconductor device | |
JPS5772340A (en) | Quality evaluating method for single crystal silicon wafer | |
JPS5272162A (en) | Production of semiconductor device | |
JPS5662368A (en) | Manufacturing of accommodation mos integrated circuit | |
JPS5680129A (en) | Manufacture of semiconductor device | |
JPS5754366A (ja) | Handotaisochinoseizohoho | |
JPS51120666A (en) | Semiconductor device manufacturing method | |
JPS6464316A (en) | Manufacture of semiconductor device |