JPS5660309A - Measuring method for film thickness of thin film - Google Patents

Measuring method for film thickness of thin film

Info

Publication number
JPS5660309A
JPS5660309A JP13615579A JP13615579A JPS5660309A JP S5660309 A JPS5660309 A JP S5660309A JP 13615579 A JP13615579 A JP 13615579A JP 13615579 A JP13615579 A JP 13615579A JP S5660309 A JPS5660309 A JP S5660309A
Authority
JP
Japan
Prior art keywords
thin film
thickness
film
measuring method
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13615579A
Other languages
Japanese (ja)
Inventor
Koichi Matsuumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13615579A priority Critical patent/JPS5660309A/en
Publication of JPS5660309A publication Critical patent/JPS5660309A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE: To obtain easily the thickness of a very thin film, by causing a monochromatic light to be incident onto the thin film vertically to measure the absolute transmission factor or the reflection factor.
CONSTITUTION: When the Y3Fe3O12 thin film grown on the Gd3Ga5O12 of 1,000Å or less is inserted as sample 24 after laser 23 is oscillated and the gain of amplifier 26 is so adjusted that the output of meter 27 may be 500mV under the state where sample 24 is not inserted between laser 23 and PbS detector 25, the output of meter 27 is 399mV. Consequently, light absolute transmission factor T is 399/500=0.798, and reciplocal 1/T is indicated in expression I, and phase δ dependent upon interference of the reflection light is obtained, and further, film thickness (d) is 560Å on the basis of expression II when the wave length of the incident wave and the refractive index in the wave length are denoted as λ and (n). Thus, the thickness of the very thin film can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP13615579A 1979-10-22 1979-10-22 Measuring method for film thickness of thin film Pending JPS5660309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13615579A JPS5660309A (en) 1979-10-22 1979-10-22 Measuring method for film thickness of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13615579A JPS5660309A (en) 1979-10-22 1979-10-22 Measuring method for film thickness of thin film

Publications (1)

Publication Number Publication Date
JPS5660309A true JPS5660309A (en) 1981-05-25

Family

ID=15168592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13615579A Pending JPS5660309A (en) 1979-10-22 1979-10-22 Measuring method for film thickness of thin film

Country Status (1)

Country Link
JP (1) JPS5660309A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396332A (en) * 1993-02-08 1995-03-07 Ciszek; Theodoer F. Apparatus and method for measuring the thickness of a semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396332A (en) * 1993-02-08 1995-03-07 Ciszek; Theodoer F. Apparatus and method for measuring the thickness of a semiconductor wafer

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