JPS5660088A - Multiwavelength light source - Google Patents

Multiwavelength light source

Info

Publication number
JPS5660088A
JPS5660088A JP13619979A JP13619979A JPS5660088A JP S5660088 A JPS5660088 A JP S5660088A JP 13619979 A JP13619979 A JP 13619979A JP 13619979 A JP13619979 A JP 13619979A JP S5660088 A JPS5660088 A JP S5660088A
Authority
JP
Japan
Prior art keywords
charp
bending
grating
light beam
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13619979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320035B2 (enrdf_load_stackoverflow
Inventor
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13619979A priority Critical patent/JPS5660088A/ja
Publication of JPS5660088A publication Critical patent/JPS5660088A/ja
Publication of JPS6320035B2 publication Critical patent/JPS6320035B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP13619979A 1979-10-22 1979-10-22 Multiwavelength light source Granted JPS5660088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13619979A JPS5660088A (en) 1979-10-22 1979-10-22 Multiwavelength light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13619979A JPS5660088A (en) 1979-10-22 1979-10-22 Multiwavelength light source

Publications (2)

Publication Number Publication Date
JPS5660088A true JPS5660088A (en) 1981-05-23
JPS6320035B2 JPS6320035B2 (enrdf_load_stackoverflow) 1988-04-26

Family

ID=15169648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13619979A Granted JPS5660088A (en) 1979-10-22 1979-10-22 Multiwavelength light source

Country Status (1)

Country Link
JP (1) JPS5660088A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000072409A3 (en) * 1999-05-10 2001-05-31 Sarnoff Corp Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics
WO2002013343A3 (en) * 2000-08-09 2003-07-31 Jds Uniphase Corp Tunable distributed feedback laser
US6771855B2 (en) 2000-10-30 2004-08-03 Santur Corporation Laser and fiber coupling control
US6781734B2 (en) 2001-03-30 2004-08-24 Santur Corporation Modulator alignment for laser
US6795453B2 (en) 2000-10-30 2004-09-21 Santur Corporation Laser thermal tuning
US6879442B2 (en) 2001-08-08 2005-04-12 Santur Corporation Method and system for selecting an output of a VCSEL array
US6910780B2 (en) 2002-04-01 2005-06-28 Santur Corporation Laser and laser signal combiner
US6914916B2 (en) 2000-10-30 2005-07-05 Santur Corporation Tunable controlled laser array
US6922278B2 (en) 2001-03-30 2005-07-26 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
FR2875018A1 (fr) * 2004-09-07 2006-03-10 Thales Sa Dispositif de combinaison de faisceaux laser ayant des longueurs d'onde differentes
JP2012151141A (ja) * 2011-01-14 2012-08-09 Fujitsu Ltd 半導体レーザ

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000072409A3 (en) * 1999-05-10 2001-05-31 Sarnoff Corp Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics
WO2002013343A3 (en) * 2000-08-09 2003-07-31 Jds Uniphase Corp Tunable distributed feedback laser
US7345802B2 (en) 2000-10-30 2008-03-18 Santur Corporation Laser and fiber coupling control
US6771855B2 (en) 2000-10-30 2004-08-03 Santur Corporation Laser and fiber coupling control
US6795453B2 (en) 2000-10-30 2004-09-21 Santur Corporation Laser thermal tuning
US6914916B2 (en) 2000-10-30 2005-07-05 Santur Corporation Tunable controlled laser array
US7382950B2 (en) 2000-10-30 2008-06-03 Santur Corporation Laser and fiber coupling control
US6781734B2 (en) 2001-03-30 2004-08-24 Santur Corporation Modulator alignment for laser
US6922278B2 (en) 2001-03-30 2005-07-26 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
US6879442B2 (en) 2001-08-08 2005-04-12 Santur Corporation Method and system for selecting an output of a VCSEL array
US6910780B2 (en) 2002-04-01 2005-06-28 Santur Corporation Laser and laser signal combiner
FR2875018A1 (fr) * 2004-09-07 2006-03-10 Thales Sa Dispositif de combinaison de faisceaux laser ayant des longueurs d'onde differentes
JP2012151141A (ja) * 2011-01-14 2012-08-09 Fujitsu Ltd 半導体レーザ

Also Published As

Publication number Publication date
JPS6320035B2 (enrdf_load_stackoverflow) 1988-04-26

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