JPS5658241A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5658241A
JPS5658241A JP13407779A JP13407779A JPS5658241A JP S5658241 A JPS5658241 A JP S5658241A JP 13407779 A JP13407779 A JP 13407779A JP 13407779 A JP13407779 A JP 13407779A JP S5658241 A JPS5658241 A JP S5658241A
Authority
JP
Japan
Prior art keywords
coated
back side
spattering
substrate
supporting body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13407779A
Other languages
Japanese (ja)
Inventor
Mitsuo Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13407779A priority Critical patent/JPS5658241A/en
Publication of JPS5658241A publication Critical patent/JPS5658241A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To readily attach a substrate on a supporting body by a method wherein an Au thin film is coated on a back side of an Si substrage by performing high frequency adverse spattering on the back side thereof in an inactive gas atmosphere of the prescrived pressure. CONSTITUTION:An N epitaxial layer is formed on an N type Si substrate to form an emitter and base layers on the surface and to utilize the back side for a collector layer. The surface is coated by wax, the back side is etched. And then it is contained in a device while the backside is faced upward and exhausted to vacuum, Ar gas is induced to maintain 8 mill torr, and it is etched by a high frequency adverse spattering. Next then, after tha Au thin film is coated by contineous spattering maintaining the vacuum condition, a heat treatment is made to form AuSi eutectic layer. When the AuSi eutectic layer is contacted with the supporting body on which the metal film is coated, the heat and the pressure are added the Si substrate can be attached easily on the supporting body. According to this condition, the breaking of wafers is reduced since the water washing, drying process are not required.
JP13407779A 1979-10-16 1979-10-16 Manufacture of semiconductor device Pending JPS5658241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13407779A JPS5658241A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13407779A JPS5658241A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5658241A true JPS5658241A (en) 1981-05-21

Family

ID=15119850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13407779A Pending JPS5658241A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5658241A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229848A (en) * 1986-03-29 1987-10-08 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229848A (en) * 1986-03-29 1987-10-08 Toshiba Corp Semiconductor device

Similar Documents

Publication Publication Date Title
US3746587A (en) Method of making semiconductor diodes
JPH04261028A (en) Method for fixation of semiconductor substrate to board
US3902936A (en) Germanium bonded silicon substrate and method of manufacture
JPS5658241A (en) Manufacture of semiconductor device
JPS54155770A (en) Manufacture of semiconductor device
GB1215088A (en) Process for affixing thin film electrical contacts to a semiconductor body comprising silicon carbide
JPS59220937A (en) Manufacture of semiconductor device
GB1501896A (en) Semiconductor device
JPS5512754A (en) Semiconductor device manufacturing method
US3384518A (en) Method for making semiconductor devices
JPS5763842A (en) Preparation of semiconductor integrated circuit
JPS5599741A (en) Affixing method of article onto adhesive tape
JPS5660022A (en) Processing method and device for semiconductor wafer
JPS5735368A (en) Manufacture of semiconductor device
JPS5524438A (en) Method of manufacturing semiconductor element
JPS5544772A (en) Manufacture of semiconductor
JPS5325350A (en) Dicing method of semiconductor substrates
JPS54101666A (en) Semiconductor device
JPS55117243A (en) Fabrication of semiconductor device
JPS5776832A (en) Method for forming palladium silicide
JPS5779626A (en) Manufacture of semiconductor element
JPS56146250A (en) Semiconductor device and manufacture therefor
JPS55111129A (en) Manufacturing method of semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS5667966A (en) Semiconductor device and preparation method thereof