JPS5655058A - Sleeve glass-molded type semiconductor device - Google Patents

Sleeve glass-molded type semiconductor device

Info

Publication number
JPS5655058A
JPS5655058A JP13003479A JP13003479A JPS5655058A JP S5655058 A JPS5655058 A JP S5655058A JP 13003479 A JP13003479 A JP 13003479A JP 13003479 A JP13003479 A JP 13003479A JP S5655058 A JPS5655058 A JP S5655058A
Authority
JP
Japan
Prior art keywords
glass
semiconductor device
electrode
melting point
lead wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13003479A
Other languages
Japanese (ja)
Inventor
Toshiki Kurosu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13003479A priority Critical patent/JPS5655058A/en
Publication of JPS5655058A publication Critical patent/JPS5655058A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent a lead wire in a semiconductor device from disconnecting by employing a middle melting point metal for an electrode on the back surface and a bump metal electrode of a sleeve glass-molded type semiconductor device such as middle and high withstand voltage diodes or the like, adhering it to the lead wire at the time of molding and thereby lowering the thermal resistance thereof. CONSTITUTION:A mask of an oxide film 2 such as an SiO2 is formed on the surface of a semiconductor substrate of Si or the like, impurity is dispersed, and a P-N junction is formed. Then, middle melting point metal such as aluminum or the like is formed on the surface to produce a bump electrode 6A, and middle melting point metal such as aluminum or the like is also formed on the back surface to produce a back surface electrode 6B. This element is placed in a sleeve glass 5, and leads 4A and 4B are attached simultaneously upon glass molding. Since the electrodes can be adhered to the lead wire at the temperature of calcining the glass, its thermal resistance can be reduced to eliminate the accident of disconnecting the wire.
JP13003479A 1979-10-11 1979-10-11 Sleeve glass-molded type semiconductor device Pending JPS5655058A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13003479A JPS5655058A (en) 1979-10-11 1979-10-11 Sleeve glass-molded type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13003479A JPS5655058A (en) 1979-10-11 1979-10-11 Sleeve glass-molded type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5655058A true JPS5655058A (en) 1981-05-15

Family

ID=15024500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13003479A Pending JPS5655058A (en) 1979-10-11 1979-10-11 Sleeve glass-molded type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5655058A (en)

Similar Documents

Publication Publication Date Title
US2650311A (en) Radiant energy detecting method and apparatus
GB967263A (en) A process for use in the production of a semi-conductor device
GB848619A (en) Improvements in or relating to the fabrication of semiconductor rectifiers
GB921845A (en) Improvements in or relating to methods and apparatus for bonding semiconductive elements and metal surfaced elements
JPS5655058A (en) Sleeve glass-molded type semiconductor device
JPS5240071A (en) Semiconductor device
JPS5650533A (en) Semiconductor device
JPS5445570A (en) Manufacture for semiconductor element
GB855382A (en) Method of producing a p-n junction in a crystalline semiconductor
GB930352A (en) Improvements in or relating to semi-conductor arrangements
JPS57104254A (en) Lateral-transistor
GB1006934A (en) Improvements in or relating to crystal diodes
JPS5718353A (en) Semiconductor device
JPS57187947A (en) Electrostatic chuck
JPS5629352A (en) Resin-sealed semiconductor device
JPS54101294A (en) Dummy mos semiconductor device
JPS5553451A (en) Semiconductor device
JPS57180158A (en) Input protector for complementary mos integrated circuit
JPS57133657A (en) Semiconductor device
GB1018848A (en) A method of attaching electrodes or electrical leads to semiconductor elements
JPS54154281A (en) Bipolar semiconductor device and its manufacture
JPS55151359A (en) Semiconductor device
GB1248304A (en) High voltage glass sealed semiconductor device
JPS5363982A (en) Production of silicon gate type mis semiconductor
JPS55120157A (en) Semiconductor integrated circuit device