JPS5651837A - Semiconductor-measuring apparatus - Google Patents
Semiconductor-measuring apparatusInfo
- Publication number
- JPS5651837A JPS5651837A JP12779179A JP12779179A JPS5651837A JP S5651837 A JPS5651837 A JP S5651837A JP 12779179 A JP12779179 A JP 12779179A JP 12779179 A JP12779179 A JP 12779179A JP S5651837 A JPS5651837 A JP S5651837A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- wafer
- laser beam
- measured
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To permit the temperature characteristics of a semiconductor element to be accurately and speedily measured by applying a laser beam to the surface of a semiconductor element to be measured. CONSTITUTION:A bias generating circuit 2 is actuated to apply a DC voltage to the oxide film of a semiconductor element at an arbitrary position in a wafer 1, and a shutter 5 is opened to apply a laser beam to the element surface. In the wafer 1, only the semiconductor element to whose surface the lase beam has been applied is heated. Because the laser beam is applied to only one portion of the wafer 1, the temperature of the irradiated portion rapidly rises, as well as the temperature can be accurately controlled. Measuring the capacity by using a capacity meter 3 while heating the semiconductor element permits the contamination degree to be quantitatively measured in a short time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12779179A JPS5651837A (en) | 1979-10-03 | 1979-10-03 | Semiconductor-measuring apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12779179A JPS5651837A (en) | 1979-10-03 | 1979-10-03 | Semiconductor-measuring apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5651837A true JPS5651837A (en) | 1981-05-09 |
Family
ID=14968760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12779179A Pending JPS5651837A (en) | 1979-10-03 | 1979-10-03 | Semiconductor-measuring apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5651837A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6243141A (en) * | 1985-08-20 | 1987-02-25 | Mitsubishi Electric Corp | Semiconductor testing apparatus |
JP2009114819A (en) * | 2007-11-09 | 2009-05-28 | Ohbayashi Corp | Partition structure |
-
1979
- 1979-10-03 JP JP12779179A patent/JPS5651837A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6243141A (en) * | 1985-08-20 | 1987-02-25 | Mitsubishi Electric Corp | Semiconductor testing apparatus |
JP2009114819A (en) * | 2007-11-09 | 2009-05-28 | Ohbayashi Corp | Partition structure |
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