JPS6453145A - Method and device for evaluation in-surface anisotropy of thin film - Google Patents

Method and device for evaluation in-surface anisotropy of thin film

Info

Publication number
JPS6453145A
JPS6453145A JP9306188A JP9306188A JPS6453145A JP S6453145 A JPS6453145 A JP S6453145A JP 9306188 A JP9306188 A JP 9306188A JP 9306188 A JP9306188 A JP 9306188A JP S6453145 A JPS6453145 A JP S6453145A
Authority
JP
Japan
Prior art keywords
thin film
heat emissivity
anisotropy
direction perpendicular
border
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9306188A
Other languages
Japanese (ja)
Inventor
Koji Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP9306188A priority Critical patent/JPS6453145A/en
Publication of JPS6453145A publication Critical patent/JPS6453145A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials Using Thermal Means (AREA)

Abstract

PURPOSE:To apply the method and device generally and to evaluate the in- surface anisotropy speedily and easily by varying the direction of the linear border part between a light irradiated part and an unirradiated part of one surface of a thin film by a specific angle, and finding heat emissivity in a direction perpendicular to the thickness direction of the film. CONSTITUTION:Part of one surface of the thin film 1 which has constant thickness is covered with a mask member which has a linear edge, a semicircular chopper 3 is rotated to irradiate the light irradiated part intermittently with light from a light source 4, and the edge is moved by a micrometer 5 to measure the AC temperature at points at various distances from the border of the unirradiated part by a thermocouple 6, thereby finding the heat emissivity in the direction perpendicular to the border line. The difference in the heat emissivity corresponds to the in-surface anisotropy, so the anisotropy of the thin film is evaluated speedily and easily by making the in-surface linear direction perpendicular to the thickness direction of the film 1 different. Further, this heat emissivity measurement is applicable to general thin film materials, so versatility is obtained.
JP9306188A 1987-05-09 1988-04-15 Method and device for evaluation in-surface anisotropy of thin film Pending JPS6453145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9306188A JPS6453145A (en) 1987-05-09 1988-04-15 Method and device for evaluation in-surface anisotropy of thin film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11285787 1987-05-09
JP9306188A JPS6453145A (en) 1987-05-09 1988-04-15 Method and device for evaluation in-surface anisotropy of thin film

Publications (1)

Publication Number Publication Date
JPS6453145A true JPS6453145A (en) 1989-03-01

Family

ID=26434507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9306188A Pending JPS6453145A (en) 1987-05-09 1988-04-15 Method and device for evaluation in-surface anisotropy of thin film

Country Status (1)

Country Link
JP (1) JPS6453145A (en)

Similar Documents

Publication Publication Date Title
DE3688373D1 (en) TEMPERATURE MEASUREMENT.
GB1493526A (en) Apparatus for measuring fouling on metal surfaces
FR2314493A1 (en) METHOD AND APPARATUS FOR MEASURING THE QUANTITY OF A FOREIGN MATERIAL SUCH AS WATER CARRIED BY A SHEET
DE68911659D1 (en) Method for thin film thickness measurement.
ATE49295T1 (en) OPTICAL-ELECTRONIC MEASUREMENT METHOD, A DEVICE REQUIRED FOR THIS AND THEIR USE.
FR2483073B1 (en) METHOD AND APPARATUS FOR MEASURING THE THICKNESSES OF A VENEER LAYER AND A BASE METAL
JPS5249055A (en) Method of measuring surface roughness
JPS6453145A (en) Method and device for evaluation in-surface anisotropy of thin film
DE69021130D1 (en) Device for measuring the electromagnetic characteristics of a material with a very high temperature.
JPS533260A (en) Film thickness measuring device of transparent thin film
JPS522452A (en) Method and apparatus for measuring plate thickness
ATE26184T1 (en) PROCEDURE FOR MEASUREMENT OF THE RATE OF OXIDATION OF A METAL METAL.
BE854556A (en) METHOD AND APPARATUS FOR DETERMINING THE PRECISION OF RADIATION MEASUREMENTS TAKEN IN THE PRESENCE OF BACKGROUND RADIATION
SU396609A1 (en) METHOD OF CONTROL OF THE FORM AND DIMENSIONS OF THE CAST POINT OF A POINT WELDED CONNECTION
JPS5674645A (en) Measuring method of thermal constant by progressive spot heat source
JPS6258146A (en) Method for measuring heat diffusivity
JPS57175201A (en) Length measuring original device and blank for said device
BE856167A (en) METHOD AND APPARATUS FOR DETERMINING THE POSITION AND SURFACE OF AN OBJECT
SU1032382A1 (en) Material thermal conductivity determination method
JPH08122155A (en) Radiation temperature measurement method for temperature object surface
JPS5651837A (en) Semiconductor-measuring apparatus
SU1733928A2 (en) Product film coating thickness nondestructive control method
JPS54138484A (en) Metal surface condition inspecting method
JPS6441836A (en) Reflected light measuring apparatus
Gurskii et al. Measurement of Polycrystalline Film Thickness on a Multilayer Substrate