JPS5648757A - Electric power amplifying circuit - Google Patents
Electric power amplifying circuitInfo
- Publication number
- JPS5648757A JPS5648757A JP12516579A JP12516579A JPS5648757A JP S5648757 A JPS5648757 A JP S5648757A JP 12516579 A JP12516579 A JP 12516579A JP 12516579 A JP12516579 A JP 12516579A JP S5648757 A JPS5648757 A JP S5648757A
- Authority
- JP
- Japan
- Prior art keywords
- electric power
- power source
- point
- transistor
- source vcc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/16—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by deflecting electron beam in cathode-ray tube, e.g. scanning corrections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Details Of Television Scanning (AREA)
Abstract
PURPOSE:To improve the dielectric strength of a power amplifying circuit on the whole by preventing an overvoltage applied to the PNP transistor at an initial SEPP output stage. CONSTITUTION:A voltage at point (b) of output DY, even if rising above electric power source Vcc in a vertical blanking interval, is blocked by diode D3 and not applied to the emitter of transistor Q4, so that nearly the same potential with electric power source Vcc will be applied. Additionally, since the potential at point (a) and that at point (b) are nearly equal, namely, twice that of electric power source Vcc, the base voltage of transistor Q4 becomes higher than that of electric power source Vcc from point (a) through constant electric power source CM and diodes D1 and D2. On the other hand, the collector of transistor Q4 is held only at the sum potential of base-emitter voltages VBE of transistors Q5 and Q6. As a result, althrough nearly the same potential as that at point (b) is applied between the base and collector of transistor Q4, nearly the same voltage as that of electric power source Vcc is only applied between the emitter and collector. Thus, the dielectric strength of the whole circuit can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12516579A JPS5648757A (en) | 1979-09-28 | 1979-09-28 | Electric power amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12516579A JPS5648757A (en) | 1979-09-28 | 1979-09-28 | Electric power amplifying circuit |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10336180A Division JPS5656014A (en) | 1980-07-28 | 1980-07-28 | Electric power amplifying circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5648757A true JPS5648757A (en) | 1981-05-02 |
Family
ID=14903483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12516579A Pending JPS5648757A (en) | 1979-09-28 | 1979-09-28 | Electric power amplifying circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5648757A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6887364B2 (en) | 2000-08-18 | 2005-05-03 | Ti Group Automotive Systems Limited | Method for manufacturing a multiple walled tube |
-
1979
- 1979-09-28 JP JP12516579A patent/JPS5648757A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6887364B2 (en) | 2000-08-18 | 2005-05-03 | Ti Group Automotive Systems Limited | Method for manufacturing a multiple walled tube |
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