JPS5648132A - Method and device for thermally conducting vacuum coated article to be treated - Google Patents

Method and device for thermally conducting vacuum coated article to be treated

Info

Publication number
JPS5648132A
JPS5648132A JP12735680A JP12735680A JPS5648132A JP S5648132 A JPS5648132 A JP S5648132A JP 12735680 A JP12735680 A JP 12735680A JP 12735680 A JP12735680 A JP 12735680A JP S5648132 A JPS5648132 A JP S5648132A
Authority
JP
Japan
Prior art keywords
treated
coated article
thermally conducting
vacuum coated
conducting vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12735680A
Other languages
English (en)
Other versions
JPH0227778B2 (ja
Inventor
Rii Kingu Monroo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eaton Corp
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22125486&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS5648132(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of JPS5648132A publication Critical patent/JPS5648132A/ja
Publication of JPH0227778B2 publication Critical patent/JPH0227778B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP12735680A 1979-09-14 1980-09-16 Method and device for thermally conducting vacuum coated article to be treated Granted JPS5648132A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/075,401 US4261762A (en) 1979-09-14 1979-09-14 Method for conducting heat to or from an article being treated under vacuum

Publications (2)

Publication Number Publication Date
JPS5648132A true JPS5648132A (en) 1981-05-01
JPH0227778B2 JPH0227778B2 (ja) 1990-06-19

Family

ID=22125486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12735680A Granted JPS5648132A (en) 1979-09-14 1980-09-16 Method and device for thermally conducting vacuum coated article to be treated

Country Status (5)

Country Link
US (1) US4261762A (ja)
EP (1) EP0025670B2 (ja)
JP (1) JPS5648132A (ja)
CA (1) CA1159161A (ja)
DE (1) DE3066291D1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171637A (ja) * 1986-01-22 1987-07-28 ノルデイシエル・マシ−ネンバウ・ルド・バアデル・ゲ−エムベ−ハ−・ウント・コンパニ・カ−ゲ− 魚から切身を作る切身とり作業において魚から皮のない腹身を得る方法および装置
JPH02197123A (ja) * 1988-09-22 1990-08-03 Fsi Internatl Inc ウエハの表側と裏側との同時のエッチングを制御する方法と装置
JPH03177572A (ja) * 1979-12-21 1991-08-01 Varian Assoc Inc ウェーハを熱処理する装置
JPH07273176A (ja) * 1995-03-10 1995-10-20 Hitachi Ltd 真空処理装置の試料保持方法
JP2022531137A (ja) * 2019-05-01 2022-07-06 アクセリス テクノロジーズ， インコーポレイテッド 高出力ウェハー冷却

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US4385937A (en) * 1980-05-20 1983-05-31 Tokyo Shibaura Denki Kabushiki Kaisha Regrowing selectively formed ion amorphosized regions by thermal gradient
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DE3118785A1 (de) * 1981-05-12 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum dotieren von halbleitermaterial
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JPS5488270U (ja) * 1977-12-05 1979-06-22
JPS54104777A (en) * 1978-01-30 1979-08-17 Rockwell International Corp Device for supporting substrata

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03177572A (ja) * 1979-12-21 1991-08-01 Varian Assoc Inc ウェーハを熱処理する装置
JPH0633457B2 (ja) * 1979-12-21 1994-05-02 バリアン・アソシエイツ・インコーポレイテッド ウェーハを熱処理する装置
JPS62171637A (ja) * 1986-01-22 1987-07-28 ノルデイシエル・マシ−ネンバウ・ルド・バアデル・ゲ−エムベ−ハ−・ウント・コンパニ・カ−ゲ− 魚から切身を作る切身とり作業において魚から皮のない腹身を得る方法および装置
JPH0434364B2 (ja) * 1986-01-22 1992-06-05 Norudeitsusheru Mashiinenbau Ruudorufu Baaderu Gmbh Unto Co Kg
JPH02197123A (ja) * 1988-09-22 1990-08-03 Fsi Internatl Inc ウエハの表側と裏側との同時のエッチングを制御する方法と装置
JPH07273176A (ja) * 1995-03-10 1995-10-20 Hitachi Ltd 真空処理装置の試料保持方法
JP2022531137A (ja) * 2019-05-01 2022-07-06 アクセリス テクノロジーズ， インコーポレイテッド 高出力ウェハー冷却

Also Published As

Publication number Publication date
EP0025670B2 (en) 1989-04-05
US4261762A (en) 1981-04-14
JPH0227778B2 (ja) 1990-06-19
DE3066291D1 (en) 1984-03-01
EP0025670B1 (en) 1984-01-25
EP0025670A1 (en) 1981-03-25
CA1159161A (en) 1983-12-20

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