JPS5647989A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5647989A
JPS5647989A JP12224779A JP12224779A JPS5647989A JP S5647989 A JPS5647989 A JP S5647989A JP 12224779 A JP12224779 A JP 12224779A JP 12224779 A JP12224779 A JP 12224779A JP S5647989 A JPS5647989 A JP S5647989A
Authority
JP
Japan
Prior art keywords
level
ram
line
precharge
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12224779A
Other languages
Japanese (ja)
Inventor
Shinji Terawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12224779A priority Critical patent/JPS5647989A/en
Publication of JPS5647989A publication Critical patent/JPS5647989A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To quicken the judgement of the level change of the data line of RAM, by fixing the precharge level of the data line. CONSTITUTION:When trasnsfer gates 3 and 4 are opened with precharge clock phip, a voltage rise across data line D according to current supply from electric power source VDD approximates to the logical threshold level of sense amplifier 1 through feedback transistor 5 connecting gate 4. Therefore, data of RAM appearing on line D according to an address clock after precharge reaches the threshold level even if the level of line D changes slightly, which is judged by amplifier 1 in a short time after addressing. As a result, the data processing of RAM can be quickened.
JP12224779A 1979-09-21 1979-09-21 Memory circuit Pending JPS5647989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12224779A JPS5647989A (en) 1979-09-21 1979-09-21 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12224779A JPS5647989A (en) 1979-09-21 1979-09-21 Memory circuit

Publications (1)

Publication Number Publication Date
JPS5647989A true JPS5647989A (en) 1981-04-30

Family

ID=14831229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12224779A Pending JPS5647989A (en) 1979-09-21 1979-09-21 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5647989A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965997A (en) * 1982-10-06 1984-04-14 Matsushita Electronics Corp Semiconductor storage device
JPS61113187A (en) * 1984-07-11 1986-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド Semiconductor memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362433A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Sense circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362433A (en) * 1976-11-17 1978-06-03 Hitachi Ltd Sense circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5965997A (en) * 1982-10-06 1984-04-14 Matsushita Electronics Corp Semiconductor storage device
JPS61113187A (en) * 1984-07-11 1986-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド Semiconductor memory
JPH0587916B2 (en) * 1984-07-11 1993-12-20 Texas Instruments Inc

Similar Documents

Publication Publication Date Title
EP0383080B1 (en) Semiconductor memory device
JPS5564686A (en) Memory unit
GB1350626A (en) Cell for mos random-access integrated circuit memory
JPS56143587A (en) Static type memory circuit
JPS5647989A (en) Memory circuit
JPS5733493A (en) Semiconductor storage device
JPS55101185A (en) Semiconductor memory device
JPS5694574A (en) Complementary mos sense circuit
KR19990069373A (en) Charge recycling sense amplifier
JPS578988A (en) Semiconductor memory
KR850006119A (en) Random access memory
JPS5712483A (en) Transistor circuit
JPS56164631A (en) Signal line precharging circuit
JPS5625295A (en) Semiconductor device
JPS5452431A (en) Semiconductor memory device
KR950015388A (en) Semiconductor memory circuit charging complementary bit lines
JPS5724093A (en) Memory cell
JPS5771585A (en) Operation system of semiconductor memory
JPS57152585A (en) Nonvolatile semiconductor memory
GB1448122A (en) Inverter circuits
JPS55108993A (en) Memory device
JPS6442095A (en) Charge circuit
JPS5616995A (en) Memory circuit
JPS54122941A (en) Memory circuit
KR920003009B1 (en) Power-up method and circuit using p-mos transistor