JPS564283A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS564283A
JPS564283A JP8003879A JP8003879A JPS564283A JP S564283 A JPS564283 A JP S564283A JP 8003879 A JP8003879 A JP 8003879A JP 8003879 A JP8003879 A JP 8003879A JP S564283 A JPS564283 A JP S564283A
Authority
JP
Japan
Prior art keywords
film
type
region
coated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8003879A
Other languages
Japanese (ja)
Inventor
Yuji Takeshita
Yasushi Fukatsu
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8003879A priority Critical patent/JPS564283A/en
Priority to DE19803023577 priority patent/DE3023577A1/en
Publication of JPS564283A publication Critical patent/JPS564283A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To accelerate the switching speed of a semiconductor device by decreasing the impurity density of a depletion type load MOSFET substrate region lower than that for determining the characteristics of an enhancement type drive MOSFET. CONSTITUTION:An SiO2 film 22 and an Si3N4 film 23 are coated on a P<->-type Si substrate 21, a resist film 24 is coated on the MOSFET forming region, the film 23 around the film 24 is etched and removed, ion is implanted through the film 22 thus exposed to form a P<+>-type region 25 thereon. Then, the film 24 is modified to a film 26 for coating the depletion type region, a P<+>-type ion implanted region 27 is formed in the enhancement type region, the film 26 is removed, and a thick field SiO2 film 221 is formed on the periphery thereof. Thereafter, a P-type layer 28 for preventing leakage of a current is formed on the surface layer of the substrate 21, a resist film 29 is coated on the enhancement type region, an N<->-type ion implanted region 30 is formed on the depletion type region, and a deep N<+>-type region 32 is formed between the two type regions to reduce the resistance.
JP8003879A 1979-06-25 1979-06-25 Semiconductor device Pending JPS564283A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8003879A JPS564283A (en) 1979-06-25 1979-06-25 Semiconductor device
DE19803023577 DE3023577A1 (en) 1979-06-25 1980-06-24 Enhancement-depletion MOS transistors - with higher impurity concn. in intermediate layer than in substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8003879A JPS564283A (en) 1979-06-25 1979-06-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS564283A true JPS564283A (en) 1981-01-17

Family

ID=13707070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8003879A Pending JPS564283A (en) 1979-06-25 1979-06-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS564283A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123680A (en) * 1977-04-01 1978-10-28 Nat Semiconductor Corp Mosfet ic and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123680A (en) * 1977-04-01 1978-10-28 Nat Semiconductor Corp Mosfet ic and method of producing same

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