JPS5642379A - Semiconductor displacement transducer - Google Patents

Semiconductor displacement transducer

Info

Publication number
JPS5642379A
JPS5642379A JP11730179A JP11730179A JPS5642379A JP S5642379 A JPS5642379 A JP S5642379A JP 11730179 A JP11730179 A JP 11730179A JP 11730179 A JP11730179 A JP 11730179A JP S5642379 A JPS5642379 A JP S5642379A
Authority
JP
Japan
Prior art keywords
layer
alloy
distortion
semiconductor
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11730179A
Other languages
Japanese (ja)
Inventor
Masatoshi Tsuchiya
Hiroshi Soeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11730179A priority Critical patent/JPS5642379A/en
Publication of JPS5642379A publication Critical patent/JPS5642379A/en
Pending legal-status Critical Current

Links

Classifications

    • H01L29/84

Landscapes

  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain preferable characteristics in the semiconductor displacement transducer by forming a solder layer of distortion creating side of Au-Si eutectic solder and an intermediate layer of a laminate of Cr, Cu, Au as seen from the insulating layer when fixing a distortion creating alloy and a semiconductor distortion detector to the insulating layer and intermediate metallic layer and further through an alloy solder layer. CONSTITUTION:When fixing a semiconductor detector 2 on a distortion creating alloy 1, an alloy solder layer 6 made of Au-Si eutectic solder is converted on the alloy 1, and an intermediate metallic layer 5 laminated with Cr, Cu, Au is formed thereon while bringing Au into contact with the layer 6. Then, an insulating film 4 such as SiO2 is coated at the Cr side of the uppermost layer, the detector 2 is fixed onto the film 4, a reaction unit 3 is formed thereat, and lead wires 7 are led from both ends thereof. Thus, the drift characteristics at high temperature at zero point can be improved, and the nonlinearity error of the distortion vs. output characteristics can be reduced extremely.
JP11730179A 1979-09-14 1979-09-14 Semiconductor displacement transducer Pending JPS5642379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11730179A JPS5642379A (en) 1979-09-14 1979-09-14 Semiconductor displacement transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11730179A JPS5642379A (en) 1979-09-14 1979-09-14 Semiconductor displacement transducer

Publications (1)

Publication Number Publication Date
JPS5642379A true JPS5642379A (en) 1981-04-20

Family

ID=14708358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11730179A Pending JPS5642379A (en) 1979-09-14 1979-09-14 Semiconductor displacement transducer

Country Status (1)

Country Link
JP (1) JPS5642379A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433682A (en) * 1977-08-22 1979-03-12 Hitachi Ltd Semiconductor displacement converter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5433682A (en) * 1977-08-22 1979-03-12 Hitachi Ltd Semiconductor displacement converter

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