JPS5642379A - Semiconductor displacement transducer - Google Patents
Semiconductor displacement transducerInfo
- Publication number
- JPS5642379A JPS5642379A JP11730179A JP11730179A JPS5642379A JP S5642379 A JPS5642379 A JP S5642379A JP 11730179 A JP11730179 A JP 11730179A JP 11730179 A JP11730179 A JP 11730179A JP S5642379 A JPS5642379 A JP S5642379A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- alloy
- distortion
- semiconductor
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000006073 displacement reaction Methods 0.000 title abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 5
- 239000000956 alloy Substances 0.000 abstract 5
- 229910000679 solder Inorganic materials 0.000 abstract 5
- 229910015365 Au—Si Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 230000005496 eutectics Effects 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H01L29/84—
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To obtain preferable characteristics in the semiconductor displacement transducer by forming a solder layer of distortion creating side of Au-Si eutectic solder and an intermediate layer of a laminate of Cr, Cu, Au as seen from the insulating layer when fixing a distortion creating alloy and a semiconductor distortion detector to the insulating layer and intermediate metallic layer and further through an alloy solder layer. CONSTITUTION:When fixing a semiconductor detector 2 on a distortion creating alloy 1, an alloy solder layer 6 made of Au-Si eutectic solder is converted on the alloy 1, and an intermediate metallic layer 5 laminated with Cr, Cu, Au is formed thereon while bringing Au into contact with the layer 6. Then, an insulating film 4 such as SiO2 is coated at the Cr side of the uppermost layer, the detector 2 is fixed onto the film 4, a reaction unit 3 is formed thereat, and lead wires 7 are led from both ends thereof. Thus, the drift characteristics at high temperature at zero point can be improved, and the nonlinearity error of the distortion vs. output characteristics can be reduced extremely.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11730179A JPS5642379A (en) | 1979-09-14 | 1979-09-14 | Semiconductor displacement transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11730179A JPS5642379A (en) | 1979-09-14 | 1979-09-14 | Semiconductor displacement transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5642379A true JPS5642379A (en) | 1981-04-20 |
Family
ID=14708358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11730179A Pending JPS5642379A (en) | 1979-09-14 | 1979-09-14 | Semiconductor displacement transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5642379A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5433682A (en) * | 1977-08-22 | 1979-03-12 | Hitachi Ltd | Semiconductor displacement converter |
-
1979
- 1979-09-14 JP JP11730179A patent/JPS5642379A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5433682A (en) * | 1977-08-22 | 1979-03-12 | Hitachi Ltd | Semiconductor displacement converter |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52127257A (en) | Displacement converter | |
JPS5642379A (en) | Semiconductor displacement transducer | |
JPS5245295A (en) | Method for fabrication of semiconductive pressure converter | |
JPS54102884A (en) | Semiconductor displacement coverter | |
SE7415064L (en) | ||
JPS54593A (en) | Semiconductor displacement transducer | |
JPS5617048A (en) | Lead frame for semiconductor device | |
JPS5685832A (en) | Semiconductor device | |
JPS5810868B2 (en) | semiconductor strain transducer | |
JPS56164557A (en) | Tin bump | |
JPS5411690A (en) | Semiconductor laser unit | |
JPS5928070B2 (en) | semiconductor displacement transducer | |
JPS57109350A (en) | Semiconductor device | |
JPS568851A (en) | Lead wire connecting method of semiconductor device | |
JPS56169363A (en) | Semiconductor device | |
JPS5740961A (en) | Manufacture for semiconductor package | |
JPS53147463A (en) | Production of semiconductor device | |
JPS56150861A (en) | Semiconductor device | |
JPS5324268A (en) | Pro duction of semiconductor device and bonding wire for the same | |
JPS53119694A (en) | Semiconductor pressure transducer | |
JPS55120162A (en) | Semiconductor device | |
JPS52109872A (en) | Semiconductor device | |
JPS54111761A (en) | Electrode construction of semiconductor device | |
JPS5314558A (en) | Semiconductor device | |
JPS57114248A (en) | Semiconductor device |