JPS52109872A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52109872A
JPS52109872A JP2755276A JP2755276A JPS52109872A JP S52109872 A JPS52109872 A JP S52109872A JP 2755276 A JP2755276 A JP 2755276A JP 2755276 A JP2755276 A JP 2755276A JP S52109872 A JPS52109872 A JP S52109872A
Authority
JP
Japan
Prior art keywords
base
semiconductor device
infamilar
solder
lowering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2755276A
Other languages
Japanese (ja)
Inventor
Masami Yokozawa
Kenichi Tateno
Michinori Shima
Kanji Mizukoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP2755276A priority Critical patent/JPS52109872A/en
Publication of JPS52109872A publication Critical patent/JPS52109872A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Abstract

PURPOSE: To avoid the production of Au - Si alloy layer at the side of base and to reduce the lowering of inverse direction performance, by coating the side of Si base divided mechanically with the insulating film infamilar with Au and after that by attaching the base to the support taking Au as solder.
COPYRIGHT: (C)1977,JPO&Japio
JP2755276A 1976-03-11 1976-03-11 Semiconductor device Pending JPS52109872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2755276A JPS52109872A (en) 1976-03-11 1976-03-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2755276A JPS52109872A (en) 1976-03-11 1976-03-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52109872A true JPS52109872A (en) 1977-09-14

Family

ID=12224215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2755276A Pending JPS52109872A (en) 1976-03-11 1976-03-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52109872A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014207256A (en) * 2013-04-10 2014-10-30 三菱電機株式会社 Semiconductor device and method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915387A (en) * 1972-05-18 1974-02-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915387A (en) * 1972-05-18 1974-02-09

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014207256A (en) * 2013-04-10 2014-10-30 三菱電機株式会社 Semiconductor device and method of manufacturing semiconductor device

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