JPS5642350A - Formation of insulating film - Google Patents
Formation of insulating filmInfo
- Publication number
- JPS5642350A JPS5642350A JP11825579A JP11825579A JPS5642350A JP S5642350 A JPS5642350 A JP S5642350A JP 11825579 A JP11825579 A JP 11825579A JP 11825579 A JP11825579 A JP 11825579A JP S5642350 A JPS5642350 A JP S5642350A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- gas
- sih4
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000002633 protecting effect Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11825579A JPS5642350A (en) | 1979-09-14 | 1979-09-14 | Formation of insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11825579A JPS5642350A (en) | 1979-09-14 | 1979-09-14 | Formation of insulating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5642350A true JPS5642350A (en) | 1981-04-20 |
| JPS6125213B2 JPS6125213B2 (zh) | 1986-06-14 |
Family
ID=14732080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11825579A Granted JPS5642350A (en) | 1979-09-14 | 1979-09-14 | Formation of insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5642350A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220833A (ja) * | 1987-05-13 | 1989-09-04 | Semiconductor Energy Lab Co Ltd | 酸化珪素被膜の高速成膜法 |
| CN110325310A (zh) * | 2017-03-17 | 2019-10-11 | 三菱综合材料株式会社 | 接合体的制造方法、绝缘电路基板的制造方法及自带散热片的绝缘电路基板的制造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08949U (ja) * | 1995-12-04 | 1996-06-11 | 井関農機株式会社 | 農用走行車体のキャビン |
-
1979
- 1979-09-14 JP JP11825579A patent/JPS5642350A/ja active Granted
Non-Patent Citations (2)
| Title |
|---|
| JOURNAL ELECTROCHEMICAL SOCIETY=1979 * |
| PHOTOCHEMISTRY OF SMALL MOLECULES=1978 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220833A (ja) * | 1987-05-13 | 1989-09-04 | Semiconductor Energy Lab Co Ltd | 酸化珪素被膜の高速成膜法 |
| CN110325310A (zh) * | 2017-03-17 | 2019-10-11 | 三菱综合材料株式会社 | 接合体的制造方法、绝缘电路基板的制造方法及自带散热片的绝缘电路基板的制造方法 |
| CN110325310B (zh) * | 2017-03-17 | 2021-08-17 | 三菱综合材料株式会社 | 接合体的制造方法、绝缘电路基板的制造方法及自带散热片的绝缘电路基板的制造方法 |
| US11478868B2 (en) | 2017-03-17 | 2022-10-25 | Mitsubishi Materials Corporation | Method for producing bonded body, method for producing insulated circuit board, and method for producing insulated circuit board with heatsink |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6125213B2 (zh) | 1986-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4702936A (en) | Gas-phase growth process | |
| US4495218A (en) | Process for forming thin film | |
| US4581248A (en) | Apparatus and method for laser-induced chemical vapor deposition | |
| JPS6140035B2 (zh) | ||
| JPH05308071A (ja) | 半導体装置のシリコン酸化膜の製造法 | |
| US5045346A (en) | Method of depositing fluorinated silicon nitride | |
| JPS5642350A (en) | Formation of insulating film | |
| JPS5710240A (en) | Forming method of insulating film | |
| JPS5940525A (ja) | 成膜方法 | |
| JPS56164523A (en) | Vapor phase growth of semiconductor | |
| JPS6437028A (en) | Manufacture of semiconductor element | |
| US3386857A (en) | Method of manufacturing semiconductor devices such as transistors and diodes and semiconductor devices manufactured by such methods | |
| JPS60190566A (ja) | 窒化珪素作製方法 | |
| JPS63258016A (ja) | 非晶質薄膜の作製方法 | |
| JPH0118149B2 (zh) | ||
| JPH0360918B2 (zh) | ||
| Ermakova et al. | Carbon‐rich plasma‐deposited silicon oxycarbonitride films derived from 4‐(trimethylsilyl) morpholine as novel single‐source precursor | |
| JPS6187342A (ja) | 多重ビ−ム照射Ｓｉ窒化法 | |
| JPS59163831A (ja) | 半導体装置の製造方法及びその製造装置 | |
| JPH0136694B2 (zh) | ||
| JPS59129773A (ja) | 選択的酸化膜の作製方法 | |
| JPS57162327A (en) | Manufacture of semiconductor device | |
| JPH0657611B2 (ja) | 石英ガラス薄膜の製造方法 | |
| Boyd | Dielectric photoformation on Si and SiGe | |
| KR950006975A (ko) | 비정질 반도체막 및 수소화된 비정질 반도체막 형성방법 |