JPS5642350A - Formation of insulating film - Google Patents

Formation of insulating film

Info

Publication number
JPS5642350A
JPS5642350A JP11825579A JP11825579A JPS5642350A JP S5642350 A JPS5642350 A JP S5642350A JP 11825579 A JP11825579 A JP 11825579A JP 11825579 A JP11825579 A JP 11825579A JP S5642350 A JPS5642350 A JP S5642350A
Authority
JP
Japan
Prior art keywords
film
substrate
gas
sih4
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11825579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6125213B2 (enExample
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11825579A priority Critical patent/JPS5642350A/ja
Publication of JPS5642350A publication Critical patent/JPS5642350A/ja
Publication of JPS6125213B2 publication Critical patent/JPS6125213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP11825579A 1979-09-14 1979-09-14 Formation of insulating film Granted JPS5642350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11825579A JPS5642350A (en) 1979-09-14 1979-09-14 Formation of insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11825579A JPS5642350A (en) 1979-09-14 1979-09-14 Formation of insulating film

Publications (2)

Publication Number Publication Date
JPS5642350A true JPS5642350A (en) 1981-04-20
JPS6125213B2 JPS6125213B2 (enExample) 1986-06-14

Family

ID=14732080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11825579A Granted JPS5642350A (en) 1979-09-14 1979-09-14 Formation of insulating film

Country Status (1)

Country Link
JP (1) JPS5642350A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220833A (ja) * 1987-05-13 1989-09-04 Semiconductor Energy Lab Co Ltd 酸化珪素被膜の高速成膜法
CN110325310A (zh) * 2017-03-17 2019-10-11 三菱综合材料株式会社 接合体的制造方法、绝缘电路基板的制造方法及自带散热片的绝缘电路基板的制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08949U (ja) * 1995-12-04 1996-06-11 井関農機株式会社 農用走行車体のキャビン

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOURNAL ELECTROCHEMICAL SOCIETY=1979 *
PHOTOCHEMISTRY OF SMALL MOLECULES=1978 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220833A (ja) * 1987-05-13 1989-09-04 Semiconductor Energy Lab Co Ltd 酸化珪素被膜の高速成膜法
CN110325310A (zh) * 2017-03-17 2019-10-11 三菱综合材料株式会社 接合体的制造方法、绝缘电路基板的制造方法及自带散热片的绝缘电路基板的制造方法
CN110325310B (zh) * 2017-03-17 2021-08-17 三菱综合材料株式会社 接合体的制造方法、绝缘电路基板的制造方法及自带散热片的绝缘电路基板的制造方法
US11478868B2 (en) 2017-03-17 2022-10-25 Mitsubishi Materials Corporation Method for producing bonded body, method for producing insulated circuit board, and method for producing insulated circuit board with heatsink

Also Published As

Publication number Publication date
JPS6125213B2 (enExample) 1986-06-14

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