JPS5637884A - Terminating circuit for word selective signal line of semiconductor memory unit - Google Patents
Terminating circuit for word selective signal line of semiconductor memory unitInfo
- Publication number
- JPS5637884A JPS5637884A JP11072079A JP11072079A JPS5637884A JP S5637884 A JPS5637884 A JP S5637884A JP 11072079 A JP11072079 A JP 11072079A JP 11072079 A JP11072079 A JP 11072079A JP S5637884 A JPS5637884 A JP S5637884A
- Authority
- JP
- Japan
- Prior art keywords
- word line
- circuit
- δih
- current source
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11072079A JPS5637884A (en) | 1979-08-30 | 1979-08-30 | Terminating circuit for word selective signal line of semiconductor memory unit |
DE8080302981T DE3071824D1 (en) | 1979-08-30 | 1980-08-28 | A termination circuit for word lines of a semiconductor memory device |
EP80302981A EP0025316B1 (en) | 1979-08-30 | 1980-08-28 | A termination circuit for word lines of a semiconductor memory device |
US06/182,670 US4370736A (en) | 1979-08-30 | 1980-08-29 | Termination circuit for word lines of a semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11072079A JPS5637884A (en) | 1979-08-30 | 1979-08-30 | Terminating circuit for word selective signal line of semiconductor memory unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5637884A true JPS5637884A (en) | 1981-04-11 |
Family
ID=14542769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11072079A Pending JPS5637884A (en) | 1979-08-30 | 1979-08-30 | Terminating circuit for word selective signal line of semiconductor memory unit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4370736A (ja) |
EP (1) | EP0025316B1 (ja) |
JP (1) | JPS5637884A (ja) |
DE (1) | DE3071824D1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4525812A (en) * | 1981-11-20 | 1985-06-25 | Fujitsu Limited | Semiconductor memory device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4393476A (en) * | 1981-07-13 | 1983-07-12 | Fairchild Camera & Instrument Corp. | Random access memory dual word line recovery circuitry |
JPS5819794A (ja) * | 1981-07-29 | 1983-02-04 | Fujitsu Ltd | 半導体メモリ |
JPS6052518B2 (ja) * | 1981-12-18 | 1985-11-19 | 富士通株式会社 | 半導体記憶装置 |
JPS58147882A (ja) * | 1982-02-27 | 1983-09-02 | Fujitsu Ltd | 半導体記憶装置のワ−ド線放電回路 |
US4601014A (en) * | 1982-03-19 | 1986-07-15 | Fujitsu Limited | Semiconductor memory with word line charge absorbing circuit |
US4488263A (en) * | 1982-03-29 | 1984-12-11 | Fairchild Camera & Instrument Corp. | Bypass circuit for word line cell discharge current |
EP0100160B1 (en) * | 1982-07-02 | 1989-09-06 | Fujitsu Limited | Semiconductor memory devices with word line discharging circuits |
JPS59180886A (ja) * | 1983-03-31 | 1984-10-15 | Fujitsu Ltd | ワ−ド線放電回路 |
JPS6010492A (ja) * | 1983-06-29 | 1985-01-19 | Fujitsu Ltd | 半導体記憶装置 |
US4570240A (en) * | 1983-12-29 | 1986-02-11 | Motorola, Inc. | AC Transient driver for memory cells |
CA2042432A1 (en) * | 1990-05-31 | 1991-12-01 | Robert M. Reinschmidt | Memory selection circuit |
JPH0442495A (ja) * | 1990-06-07 | 1992-02-13 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR20180075083A (ko) * | 2016-12-26 | 2018-07-04 | 에스케이하이닉스 주식회사 | 동적 터미네이션 회로, 이를 포함하는 반도체 장치 및 시스템 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5341968A (en) * | 1976-09-29 | 1978-04-15 | Hitachi Ltd | Semiconductor circuit |
JPS5375828A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Semiconductor circuit |
US4168539A (en) * | 1978-09-15 | 1979-09-18 | Gte Laboratories Incorporated | Memory system with row clamping arrangement |
-
1979
- 1979-08-30 JP JP11072079A patent/JPS5637884A/ja active Pending
-
1980
- 1980-08-28 DE DE8080302981T patent/DE3071824D1/de not_active Expired
- 1980-08-28 EP EP80302981A patent/EP0025316B1/en not_active Expired
- 1980-08-29 US US06/182,670 patent/US4370736A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4525812A (en) * | 1981-11-20 | 1985-06-25 | Fujitsu Limited | Semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
EP0025316A2 (en) | 1981-03-18 |
US4370736A (en) | 1983-01-25 |
DE3071824D1 (en) | 1986-12-11 |
EP0025316B1 (en) | 1986-11-05 |
EP0025316A3 (en) | 1982-11-24 |
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