JPS5635485A - Manufacture of semiconductor laser element - Google Patents

Manufacture of semiconductor laser element

Info

Publication number
JPS5635485A
JPS5635485A JP11079379A JP11079379A JPS5635485A JP S5635485 A JPS5635485 A JP S5635485A JP 11079379 A JP11079379 A JP 11079379A JP 11079379 A JP11079379 A JP 11079379A JP S5635485 A JPS5635485 A JP S5635485A
Authority
JP
Japan
Prior art keywords
substrate
al2o3
laser element
thereafter
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11079379A
Other languages
Japanese (ja)
Other versions
JPS5850037B2 (en
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11079379A priority Critical patent/JPS5850037B2/en
Publication of JPS5635485A publication Critical patent/JPS5635485A/en
Publication of JPS5850037B2 publication Critical patent/JPS5850037B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a complete film having preferable adherence and protective effect by heating a laser crystal at higher than 200 deg.C and thereafter evaporating Al2O3 on the resonant surface thereof. CONSTITUTION:A GaAlAs laser substrate is cut, and a rectangular substrate 1 connected with a streak architecture double hetero junction type laser element is formed, and Al2O3 is evaporated thereon in the state that is heated at approx. 300 deg.C by an infrared ray lamp 2. The temperature of the substrate 1 is detected by a thermocouple 3, electrons are irradiated from a filament 5 to a target 4, and are deposited. Thereafter, it is divided into elements. According to this configuration, the Al2O3 is not isolated due to the cleavage of the substrate, and preferable protective film can be obtained, and its deterioration can be prevented.
JP11079379A 1979-08-29 1979-08-29 Manufacturing method of semiconductor laser device Expired JPS5850037B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11079379A JPS5850037B2 (en) 1979-08-29 1979-08-29 Manufacturing method of semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11079379A JPS5850037B2 (en) 1979-08-29 1979-08-29 Manufacturing method of semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS5635485A true JPS5635485A (en) 1981-04-08
JPS5850037B2 JPS5850037B2 (en) 1983-11-08

Family

ID=14544768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11079379A Expired JPS5850037B2 (en) 1979-08-29 1979-08-29 Manufacturing method of semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5850037B2 (en)

Also Published As

Publication number Publication date
JPS5850037B2 (en) 1983-11-08

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