JPS5465396A - Thin film resistor - Google Patents

Thin film resistor

Info

Publication number
JPS5465396A
JPS5465396A JP13169277A JP13169277A JPS5465396A JP S5465396 A JPS5465396 A JP S5465396A JP 13169277 A JP13169277 A JP 13169277A JP 13169277 A JP13169277 A JP 13169277A JP S5465396 A JPS5465396 A JP S5465396A
Authority
JP
Japan
Prior art keywords
mob
substrate
thin film
spattering
film resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13169277A
Other languages
Japanese (ja)
Other versions
JPS6032961B2 (en
Inventor
Toshitami Hara
Akira Niimi
Masahisa Fukui
Yoshiki Hajimoto
Yoshiaki Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP52131692A priority Critical patent/JPS6032961B2/en
Publication of JPS5465396A publication Critical patent/JPS5465396A/en
Publication of JPS6032961B2 publication Critical patent/JPS6032961B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Non-Adjustable Resistors (AREA)
  • Conductive Materials (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE: To obtain thin film resistor with the capability of wide range of resistivity prescription and stability to head and change on standing in moist condition by heating the substrate and evaporating or spattering molybdenum boride.
CONSTITUTION: Forming MoB thin film on the substrate such as glass or glazed ceramic by electron beam evaporating or spattering. In the case of the electron beam evaporation procedure MoB tablets are prepared by pressing MoB powder, and MoB is evaporated under heating the substrate at 200 to 500°C. In the case of the spattering procedure MoB is spattered on a substrate with high frequency dipolar spatter under heating the substrate at 200 to 500°C, using hot pressed (e.g. at 1300°C) MoB as a target. Thereby, a small-sized thin film resistor with reduced resistance temperature coefficient and cxcellent stability to changes in temperature and other conditions of atmosphere can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP52131692A 1977-11-02 1977-11-02 thin film resistor Expired JPS6032961B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52131692A JPS6032961B2 (en) 1977-11-02 1977-11-02 thin film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52131692A JPS6032961B2 (en) 1977-11-02 1977-11-02 thin film resistor

Publications (2)

Publication Number Publication Date
JPS5465396A true JPS5465396A (en) 1979-05-25
JPS6032961B2 JPS6032961B2 (en) 1985-07-31

Family

ID=15063968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52131692A Expired JPS6032961B2 (en) 1977-11-02 1977-11-02 thin film resistor

Country Status (1)

Country Link
JP (1) JPS6032961B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911402U (en) * 1982-07-14 1984-01-24 エヌオーケー株式会社 contact type variable resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911402U (en) * 1982-07-14 1984-01-24 エヌオーケー株式会社 contact type variable resistor

Also Published As

Publication number Publication date
JPS6032961B2 (en) 1985-07-31

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