JPS5633877A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5633877A JPS5633877A JP10996279A JP10996279A JPS5633877A JP S5633877 A JPS5633877 A JP S5633877A JP 10996279 A JP10996279 A JP 10996279A JP 10996279 A JP10996279 A JP 10996279A JP S5633877 A JPS5633877 A JP S5633877A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- layer
- diode
- current
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Abstract
PURPOSE:To make it possible to design the both forward current and backward current can be the optimum characteristic independently by a method wherein the route of the forward current and the backward current are separated. CONSTITUTION:A diode N-layer 10 different from an intermediate N-layer 4 is arranged on the surface of the intermediate P-layer 5, and this N-layer 10 is connected to the first electrode 1 on the surface 14. Further, the inverse breakdown voltage of P-N junction of this diode N-layer 10 is made several 10s or 100 volts higher than the inverse breakdown voltage in the forward direction barrier junction 9. When the forward direction barrier junction 9 is broke over, it does not give any effect to the forward direction characteristic, since the diode junction 13 is holding the breakdown voltage. The backward current that flows from the 2nd electrode 2 to the 1st electrode 1 does not flow through the resistance 11, the junction 9 which contribute to the forward current and flows through the route of low resistance passing the diode junction 13.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10996279A JPS5633877A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10996279A JPS5633877A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5633877A true JPS5633877A (en) | 1981-04-04 |
Family
ID=14523550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10996279A Pending JPS5633877A (en) | 1979-08-28 | 1979-08-28 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5633877A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365099A (en) * | 1988-12-02 | 1994-11-15 | Motorola, Inc. | Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5494288A (en) * | 1978-01-09 | 1979-07-25 | Mitsubishi Electric Corp | 2 terminal reverse conducting thyristor |
-
1979
- 1979-08-28 JP JP10996279A patent/JPS5633877A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5494288A (en) * | 1978-01-09 | 1979-07-25 | Mitsubishi Electric Corp | 2 terminal reverse conducting thyristor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365099A (en) * | 1988-12-02 | 1994-11-15 | Motorola, Inc. | Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage |
US5631187A (en) * | 1988-12-02 | 1997-05-20 | Motorola, Inc. | Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage |
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