JPS5633853A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5633853A
JPS5633853A JP10995679A JP10995679A JPS5633853A JP S5633853 A JPS5633853 A JP S5633853A JP 10995679 A JP10995679 A JP 10995679A JP 10995679 A JP10995679 A JP 10995679A JP S5633853 A JPS5633853 A JP S5633853A
Authority
JP
Japan
Prior art keywords
insulating film
polycrystalline silicon
melting
semiconductor device
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10995679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6350857B2 (enrdf_load_stackoverflow
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10995679A priority Critical patent/JPS5633853A/ja
Publication of JPS5633853A publication Critical patent/JPS5633853A/ja
Publication of JPS6350857B2 publication Critical patent/JPS6350857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP10995679A 1979-08-28 1979-08-28 Semiconductor device Granted JPS5633853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10995679A JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10995679A JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5633853A true JPS5633853A (en) 1981-04-04
JPS6350857B2 JPS6350857B2 (enrdf_load_stackoverflow) 1988-10-12

Family

ID=14523388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10995679A Granted JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5633853A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120362A (en) * 1981-01-17 1982-07-27 Toshiba Corp Semiconductor fuse
JPS58123759A (ja) * 1982-01-18 1983-07-23 Fujitsu Ltd 半導体記憶装置
WO2004102664A1 (ja) * 2003-05-13 2004-11-25 Fujitsu Limited ヒューズ回路および半導体集積回路装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120362A (en) * 1981-01-17 1982-07-27 Toshiba Corp Semiconductor fuse
JPS58123759A (ja) * 1982-01-18 1983-07-23 Fujitsu Ltd 半導体記憶装置
WO2004102664A1 (ja) * 2003-05-13 2004-11-25 Fujitsu Limited ヒューズ回路および半導体集積回路装置
US7158435B2 (en) 2003-05-13 2007-01-02 Fujitsu Limited Fuse circuit and semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6350857B2 (enrdf_load_stackoverflow) 1988-10-12

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