JPS5633515A - Semiconductor light detector - Google Patents
Semiconductor light detectorInfo
- Publication number
- JPS5633515A JPS5633515A JP10811179A JP10811179A JPS5633515A JP S5633515 A JPS5633515 A JP S5633515A JP 10811179 A JP10811179 A JP 10811179A JP 10811179 A JP10811179 A JP 10811179A JP S5633515 A JPS5633515 A JP S5633515A
- Authority
- JP
- Japan
- Prior art keywords
- another
- type
- layers
- junctions
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000926 separation method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000003491 array Methods 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000023077 detection of light stimulus Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To reduce brooming, by placing the constituent elements of a plurality of photodiode arrays, which are provided in a semiconductor substrate, in insular regions separated from one another by separation regions and by using p-n junctions to separate the constituent elements from one another. CONSTITUTION:A plurality of photodiode elements having p-n junctions JA, JB,... for detection of light, which are made of n type layers 12A, 12B,... and p type layers 15A, 15B,..., are provided in insular regions separated from one another by separation layers 13 in a silicon substrate 11. The array constituting elements are separated from one another by p-n junctions KA, KB,... among the n type layers 12A, 12B,..., the p<+> type separation layers 13 and the p type silicon substrate 1. After phosphorus glass 17 is produced on the entire surface of photodiode arrays, openings for electrodes 18 are made and Al is coated as the electrodes by evaporation. Prescribed wirings are provided among the electrodes 18. Brooming is thereby reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10811179A JPS5925164B2 (en) | 1979-08-27 | 1979-08-27 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10811179A JPS5925164B2 (en) | 1979-08-27 | 1979-08-27 | Semiconductor photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5633515A true JPS5633515A (en) | 1981-04-04 |
| JPS5925164B2 JPS5925164B2 (en) | 1984-06-15 |
Family
ID=14476166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10811179A Expired JPS5925164B2 (en) | 1979-08-27 | 1979-08-27 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5925164B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5574364A (en) * | 1993-02-19 | 1996-11-12 | Nippondenso Co., Ltd. | Position detector including a reference position wherein the sensor is saturating the MR sensor for preventing hysteresis and in a bridge circuit |
-
1979
- 1979-08-27 JP JP10811179A patent/JPS5925164B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5574364A (en) * | 1993-02-19 | 1996-11-12 | Nippondenso Co., Ltd. | Position detector including a reference position wherein the sensor is saturating the MR sensor for preventing hysteresis and in a bridge circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5925164B2 (en) | 1984-06-15 |
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