JPS5848456A - Pattern detector - Google Patents
Pattern detectorInfo
- Publication number
- JPS5848456A JPS5848456A JP56146756A JP14675681A JPS5848456A JP S5848456 A JPS5848456 A JP S5848456A JP 56146756 A JP56146756 A JP 56146756A JP 14675681 A JP14675681 A JP 14675681A JP S5848456 A JPS5848456 A JP S5848456A
- Authority
- JP
- Japan
- Prior art keywords
- row
- elements
- photoelectric conversion
- center
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image Input (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は微小領域を透過する光あるいは敏小領域によっ
て連光される光を検出できるパターン検出器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pattern detector capable of detecting light transmitted through a minute area or light continuous by a minute area.
このようなパターン検出器は、微小物体の検出あるいは
不透明体の微小な穴の検出が可能で、例えばのり（Ｓ苔
）の穴、かけを検出して品質管理す葛のに利用される。Such a pattern detector is capable of detecting minute objects or minute holes in opaque bodies, and is used, for example, for quality control by detecting holes and chips in glue (S moss).
従来のこの稙の検出器としては投光器より出て被検出体
を照射する光を多数のフォトダイオードよりなるイメー
ジセンサ受光器で受光して検出するものがあるが、光を
検出するイメージセンサ部が小さいので、光をしばった
形で被検出体にあてる必要があるうまた光をしぼるため
の光学系の性能によって検出精度が大きく左右されるこ
とになる。従って、のりなどのように穴、か゛けが位置
においても形状においても大きさにおいても不規則に存
在するものは、イメージセンサを用いた検出器によ゛り
検査することはかなり費用がかかる。Conventional detectors of this type detect light emitted from a projector and irradiated onto an object to be detected by receiving the light with an image sensor receiver consisting of a number of photodiodes, but the image sensor section that detects the light is Since it is small, it is necessary to apply the light to the object to be detected in a constricted form, and the detection accuracy is greatly influenced by the performance of the optical system for constricting the light. Therefore, it is quite expensive to inspect items such as glue, where holes and scratches are irregular in position, shape, and size, using a detector using an image sensor.
本発明はこれに対して大面積の亀のも製作可能な薄膜太
陽電池を利用して、簡単な構造セ検出精度の嵩いパター
ン検出器を構成することを目的とする。In contrast, the present invention aims to construct a bulky pattern detector with a simple structure and high detection accuracy by using a thin film solar cell that can be manufactured with a large area.
この目的は、パターン検出器が平行して配置された２タ
リの光電変換素子列を備え、その光電変換素子列は一平
面上に一線に配列された薄膜半導体を有する複数の光電
変換素子よりなり、一方の列の素子の中央が他方の列の
隣接素子の間隙に対向するよう化ずれて位置することに
よって達成される。The purpose of this is that the pattern detector is equipped with two photoelectric conversion element rows arranged in parallel, and the photoelectric conversion element row is composed of a plurality of photoelectric conversion elements having thin film semiconductors arranged in a line on one plane. , is achieved by offsetting the centers of the elements in one row so as to face the gaps between adjacent elements in the other row.
以下図を引用して本発明の実施例について説明する。第
１図は光電変換素子列を一列のみ示し、第２図はその側
断面図である。本発明によるパターン検出器は基本的に
は従来のイメージセンサにおけるフォトダイオードを薄
膜太陽電池と同様に構門したもので、例えばガラスから
なる透明基板１の上にＩＴＯ（インジュウムすず絨化物
）からなる透明導電膜２を被着し、その上にシランガス
のグロー放電分解法により生成したアモルファスシリコ
ンからなるシリコン薄１１ｉ３を重ねる。シリコン薄膜
３はＰＮ接合あるいは表面障壁による光電変換活性領域
を有する。シリコン薄膜３．の上面にはアルミニウム蒸
着膜からなる複数の方形電極４が僅かな間隔を明けてｌ
ｌｌ１Ｌで一線上に配列されている。電１に４に接続さ
れる端子５および透明導電膜２の接地電極６も電極４と
同一の蒸着工場で作成される。端子５を有する各電極４
と共通電極となる透明導電膜２の間に光電変換素子７が
形成される。いまこの素子７と光源８の間を矢印Ｐ方向
に移動される被検出体１０に穴１１が存在すると、鎖線
でハツチングした検出部分に透明基板７詔よび透明導電
膜２を通して入射する光により光間−１力が生じ、その
起電力は端子５より外部へ引き出される。穴１１が検出
部分の奥行きＸよりも小さい場合には素子７の出力信号
は第３図の実線３１のようになり、穴１１の径がＸと等
しい場合の出力信号は破＠３２のように、そして穴１１
がＸより大きい場合には出力信号は破線３３のようにな
る。従ってＸの大きさを適当にとることにより、必要な
感度の設定を行うことができる。−力検出部分の被検出
体の移動方向に直角方向の幅Ｙは感度に対して直接影養
しないが、Ｙを大きくすると多数の小さい孔と一つの大
きい孔との職別が不可能になるのでその寸法に制約があ
り、小さい素子７を被検出体１０の幅に対応した数だけ
一線に配列する。従って素子間Ｊこ関ＩＩＤが存在する
、もし穴あるいは微小物体のような微小領域の投影が符
号９で示したように二つの検出部分の真中を通過すると
、双方の素子の出力信号は一つの素子内を通過する場合
の半分以下となり、実際の検出対象領域の大きさとかけ
離れたものになる。その結果検出すべき大きさを有する
領域を検知できないことが起きる。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows only one row of photoelectric conversion elements, and FIG. 2 is a side sectional view thereof. The pattern detector according to the present invention is basically a photodiode in a conventional image sensor constructed in the same way as a thin film solar cell.For example, the pattern detector is made of ITO (indium tin vatide) on a transparent substrate 1 made of glass. A transparent conductive film 2 is deposited, and a thin silicon layer 11i3 made of amorphous silicon produced by glow discharge decomposition of silane gas is placed thereon. The silicon thin film 3 has a photoelectric conversion active region formed by a PN junction or a surface barrier. Silicon thin film 3. On the top surface, a plurality of rectangular electrodes 4 made of vapor-deposited aluminum are arranged at slight intervals.
They are arranged on a line in ll1L. The terminal 5 connected to the electrodes 1 and 4 and the ground electrode 6 of the transparent conductive film 2 are also produced in the same vapor deposition factory as the electrode 4. Each electrode 4 with a terminal 5
A photoelectric conversion element 7 is formed between the transparent conductive film 2 and the common electrode. If a hole 11 exists in the detected object 10 that is being moved between the element 7 and the light source 8 in the direction of arrow P, light will be transmitted through the transparent substrate 7 and the transparent conductive film 2 to the detection area hatched with a chain line. -1 force is generated, and the electromotive force is extracted from the terminal 5 to the outside. If the hole 11 is smaller than the depth X of the detection part, the output signal of the element 7 will be as shown by the solid line 31 in Figure 3, and if the diameter of the hole 11 is equal to X, the output signal will be as shown by broken @32. , and hole 11
When is larger than X, the output signal becomes as shown by the broken line 33. Therefore, by appropriately setting the magnitude of X, the necessary sensitivity can be set. - The width Y of the force detection part in the direction perpendicular to the direction of movement of the object to be detected does not directly affect the sensitivity, but if Y is increased, it becomes impossible to distinguish between many small holes and one large hole. Therefore, there are restrictions on its dimensions, and a number of small elements 7 corresponding to the width of the detected object 10 are arranged in a line. Therefore, there is a gap between the elements, and if the projection of a minute area such as a hole or a minute object passes through the middle of two detection parts as shown by reference numeral 9, the output signals of both elements will be one This is less than half of the size when passing through the element, which is far from the size of the actual detection target area. As a result, an area having a size that should be detected may not be detected.
本発＃４番こおいては第４図のように二つの光電変換素
子列２１．２２を平行に、かつ一方ｒ／１列の素子７の
中央か他方の列の隣接素子の関＠２３に対向するように
ずらして配置している。このように配置することにより
Ｐ方向に移動する被検出体の検出対象領域の投影が一方
の列のＩＩＩ接菓干菓子隙を通過しても他方の素子の中
央を通過するため、検出対象領域の大きさに対応した出
力信号を得ることができる。さらに投影が素子の中央か
らずれて通過する場合本いずれかの列のいずれかの素子
内にいずれかの時点で検出対象領域の全部が投影される
ため痺は、検出対象領域を円形と仮定すると対向する素
子の重なり＠Ｌが素子の検出部分の央行きＸよりも太き
けれはよい。すなわち検出部分の配列方向の幅Ｙが２Ｘ
＋Ｄよりも大きけｎ、ばよい。In this case #4, the two photoelectric conversion element rows 21 and 22 are arranged in parallel as shown in FIG. They are staggered so that they face each other. With this arrangement, even if the projection of the detection target area of the detected object moving in the P direction passes through the III confectionery gap in one row, it passes through the center of the other element, so that the detection target area An output signal corresponding to the size can be obtained. Furthermore, if the projection passes off the center of the element, the entire detection target area is projected into any element in any column at any time, so if we assume that the detection target area is circular, It is good if the overlap @L of the opposing elements is thicker than the center X of the detection part of the element. In other words, the width Y of the detection part in the arrangement direction is 2X
It is better if it is larger than +D.
以上述べたように本発明は薄膜半導体からなる複数の光
電変換素子を平行する二つの列として配列し、一方の列
の素子の中央が他方のタリの隣接素子の関−に対向させ
ることにより、いずれかの列のいずれかの素子に不透明
物体１ノ）所定の大赤さの穴あるいは所定の大きさの不
透明物体の全部が投影されるようにして、所定の大きさ
以上の穴あるいは物体を精度よく検出可能にするもので
ある。As described above, the present invention arranges a plurality of photoelectric conversion elements made of thin film semiconductors in two parallel rows, and makes the center of the elements of one row face the adjacent elements of the other row. An opaque object 1) A hole or object larger than a predetermined size is projected so that the entire opaque object 1) hole of a predetermined large red color or opaque object of a predetermined size is projected onto any element in any row. This enables accurate detection.
しかもこのよつな検出器は牛導体薄膜上の電極の形状を
選定することのみによって得られるので、構造簡単で例
えばマスクを用いた蒸着の適用により容易に製作でき、
幅の広いものも製作可能であるため大きい被検ｍ体の場
合にも適用できるので得られる効果は極めて大きい。Moreover, this sophisticated detector can be obtained by simply selecting the shape of the electrode on the conductor thin film, so it has a simple structure and can be easily manufactured by, for example, vapor deposition using a mask.
Since it is possible to manufacture a wide width one, it can be applied to a large subject to be examined, and the effect obtained is extremely large.
ｌＩ４１図は本発１によるパターン検出器の一実施例の
半分を７ＩＣ４′″平−図、第２図はそのｇ４断面図、
第３図は検出対象領域の大きさをパラメータとした光電
変換素子の出力と被検出体の移動時間との関係線図、第
４図は本発明によるパターン検出器の一実施例を示す平
面図である。
１・−透明基板、２・・・透明導電膜、３・・・シリコ
ン薄膜、４・・・電極、７・・・光電変換素子、２１．
２２・・・光電変換素子列。
オ １図
第３図Figure lI41 is a 7IC4'' plan view of half of an embodiment of the pattern detector according to the present invention 1, and Figure 2 is its g4 cross-sectional view.
FIG. 3 is a relationship diagram between the output of the photoelectric conversion element and the moving time of the object to be detected using the size of the detection target area as a parameter, and FIG. 4 is a plan view showing an embodiment of the pattern detector according to the present invention. It is. 1.-Transparent substrate, 2.. Transparent conductive film, 3.. Silicon thin film, 4.. Electrode, 7.. Photoelectric conversion element, 21.
22...Photoelectric conversion element row. Figure 1 Figure 3
Claims (1)
咳光電変換素子列はそれ−ぞれ一平面上に一線に配列さ
れた薄膜半導体を有する複数の光電変換素子よりなり、
一方の列の素子の中央が他方の列のＩＩ接素子の一間隙
に対向するようにずれて位置することを特徴とするパタ
ーン検出（至）。 ２、特許請求の範囲第１項記載の検出ｆＦ４とおいて、
素子の検出部分の配列方向に直角な寸法をＸ１平行な寸
法をＹ、ｉｌｌ接素子の間隙の寸法をＤきしたとき、Ｙ
≧２Ｘ＋Ｄであることを特徴とするパターン検出器。[Claims] 1) comprising two rows of photoelectric conversion elements arranged in parallel,
Each row of photoelectric conversion elements includes a plurality of photoelectric conversion elements each having a thin film semiconductor arranged in a line on one plane,
Pattern detection (to) characterized in that the centers of the elements in one row are shifted and positioned so as to face one gap between the II contact elements in the other row. 2. In the detection fF4 described in claim 1,
When the dimension perpendicular to the arrangement direction of the detection portion of the element is X1, the parallel dimension is Y, and the dimension of the gap between the illuminating elements is D, then Y
A pattern detector characterized in that ≧2X+D.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56146756A JPS5848456A (en) | 1981-09-17 | 1981-09-17 | Pattern detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56146756A JPS5848456A (en) | 1981-09-17 | 1981-09-17 | Pattern detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5848456A true JPS5848456A (en) | 1983-03-22 |
Family
ID=15414859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56146756A Pending JPS5848456A (en) | 1981-09-17 | 1981-09-17 | Pattern detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848456A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199561A (en) * | 1982-05-17 | 1983-11-19 | Fuji Xerox Co Ltd | Thin film photodetector |
-
1981
- 1981-09-17 JP JP56146756A patent/JPS5848456A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199561A (en) * | 1982-05-17 | 1983-11-19 | Fuji Xerox Co Ltd | Thin film photodetector |
| JPH0572111B2 (en) * | 1982-05-17 | 1993-10-08 | Fuji Xerox Co Ltd |
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