JPS5629339A - Glass seal of semiconductor element - Google Patents

Glass seal of semiconductor element

Info

Publication number
JPS5629339A
JPS5629339A JP10568279A JP10568279A JPS5629339A JP S5629339 A JPS5629339 A JP S5629339A JP 10568279 A JP10568279 A JP 10568279A JP 10568279 A JP10568279 A JP 10568279A JP S5629339 A JPS5629339 A JP S5629339A
Authority
JP
Japan
Prior art keywords
liquid
glass
semiconductor element
slurrylike
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10568279A
Other languages
Japanese (ja)
Other versions
JPS6126219B2 (en
Inventor
Yasuo Hasegawa
Hidenobu Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Origin Electric Co Ltd
Original Assignee
Origin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Origin Electric Co Ltd filed Critical Origin Electric Co Ltd
Priority to JP10568279A priority Critical patent/JPS5629339A/en
Publication of JPS5629339A publication Critical patent/JPS5629339A/en
Publication of JPS6126219B2 publication Critical patent/JPS6126219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To form preferable glass seal of a semiconductor element using slurrylike glass liquid having high viscosity by applying suitable vibration to the glass liquid when dropping the slurrylike glass liquid to the surface of the semiconductor element. CONSTITUTION:Agitators 3, 3' are operated to agitate glass and solvent to form uniform slurrylike glass liquid 2. Thereafter, a vibrator 5 is operated by a control circuit 6 to regulate the vibration frquency and the amplitude of the vibrator 5 to drop the desired amount of liquid 2 from a dropping nozzle 4. In this manner desired amount of liquid 2 is dropped onto the outer peripheral surfaces of semiconductor element 7 and electrodes 8, 8' of rotating state in a direction as designated by arrows. Since the glass sealing unit is so formed that unless vibration is applied thereto, the liquid will not be dropped from the nozzle 4 because of its high viscosity and is wound on the element 7, it may be uniformly formed in increased thickness.
JP10568279A 1979-08-20 1979-08-20 Glass seal of semiconductor element Granted JPS5629339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10568279A JPS5629339A (en) 1979-08-20 1979-08-20 Glass seal of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10568279A JPS5629339A (en) 1979-08-20 1979-08-20 Glass seal of semiconductor element

Publications (2)

Publication Number Publication Date
JPS5629339A true JPS5629339A (en) 1981-03-24
JPS6126219B2 JPS6126219B2 (en) 1986-06-19

Family

ID=14414180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10568279A Granted JPS5629339A (en) 1979-08-20 1979-08-20 Glass seal of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5629339A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52109125A (en) * 1976-03-09 1977-09-13 Kogyo Gijutsuin Circulating electrolyte type metal air secondary battery
EP0111932A2 (en) * 1982-12-20 1984-06-27 Hitachi, Ltd. Resin-molded semiconductor devices and a process for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52109125A (en) * 1976-03-09 1977-09-13 Kogyo Gijutsuin Circulating electrolyte type metal air secondary battery
JPS5832750B2 (en) * 1976-03-09 1983-07-14 工業技術院長 How to operate an electrolyte circulating metal-air secondary battery
EP0111932A2 (en) * 1982-12-20 1984-06-27 Hitachi, Ltd. Resin-molded semiconductor devices and a process for manufacturing the same

Also Published As

Publication number Publication date
JPS6126219B2 (en) 1986-06-19

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