JPS5629324A - Etching of metallic electrode - Google Patents

Etching of metallic electrode

Info

Publication number
JPS5629324A
JPS5629324A JP10403579A JP10403579A JPS5629324A JP S5629324 A JPS5629324 A JP S5629324A JP 10403579 A JP10403579 A JP 10403579A JP 10403579 A JP10403579 A JP 10403579A JP S5629324 A JPS5629324 A JP S5629324A
Authority
JP
Japan
Prior art keywords
concentrated
hydrogen peroxide
aqueous hydrogen
etching
fluoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10403579A
Other languages
Japanese (ja)
Inventor
Hideaki Izumi
Haruo Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10403579A priority Critical patent/JPS5629324A/en
Publication of JPS5629324A publication Critical patent/JPS5629324A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals

Abstract

PURPOSE:To enable etching of Nb or T a metal in high reproducibility and controllability, by particularly reducing the mixing ratio of aqueous hydrogen peroxide to concentrated fluoric acid in a mixed solution of concentrated sulfuric acid, water, concentrated aqueous hydrogen peroxide and concentrated fluoric acid. CONSTITUTION:A metallic electrode containing Nb or Ta as main ingredients is etched by a solution obtained by mixing at volumetric ratio 30-50 of concentrated sulfuric acid, 45-65 of water, 0.2-3.0 of concentrated aqueous hydrogen peroxide and 1.0-5.0 of concentrated fluoric acid. By reducing the mixing ratio of the concentrated aqueous hydrogen peroxide and the concentrated fluoric acid particularly in this manner to suppress the etching rate of semiconductors, insulating films and metals other than Nb and Ta, Nb or Ta may be selectively etched in high reproducibility. If the solution temperature becomes lower than 0 deg.C the etching rate is abruptly decelerated, while if it becomes higher than 50 deg.C, uniform etching becomes impossible, and so it is preferred that the solution temperature is kept in the range of 0-50 deg.C.
JP10403579A 1979-08-17 1979-08-17 Etching of metallic electrode Pending JPS5629324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10403579A JPS5629324A (en) 1979-08-17 1979-08-17 Etching of metallic electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10403579A JPS5629324A (en) 1979-08-17 1979-08-17 Etching of metallic electrode

Publications (1)

Publication Number Publication Date
JPS5629324A true JPS5629324A (en) 1981-03-24

Family

ID=14369965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10403579A Pending JPS5629324A (en) 1979-08-17 1979-08-17 Etching of metallic electrode

Country Status (1)

Country Link
JP (1) JPS5629324A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704188A (en) * 1983-12-23 1987-11-03 Honeywell Inc. Wet chemical etching of crxsiynz
JPH01316473A (en) * 1988-06-16 1989-12-21 Agency Of Ind Science & Technol Method for etching niobium film
US6461978B1 (en) 1998-10-23 2002-10-08 Lg. Philips Lcd Co., Ltd. Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate
JP2004204266A (en) * 2002-12-24 2004-07-22 Tosoh Corp Composition for dissolving tantalum, and dissolving method using the same
CN108085684A (en) * 2017-11-23 2018-05-29 中国科学院近代物理研究所 For going the chemical decoating liquid of copper removal surface niobium coating and strip method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704188A (en) * 1983-12-23 1987-11-03 Honeywell Inc. Wet chemical etching of crxsiynz
JPH01316473A (en) * 1988-06-16 1989-12-21 Agency Of Ind Science & Technol Method for etching niobium film
US6461978B1 (en) 1998-10-23 2002-10-08 Lg. Philips Lcd Co., Ltd. Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate
US7101809B2 (en) 1998-10-23 2006-09-05 Lg.Philips Lcd Co., Ltd. Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate
US7202165B2 (en) 1998-10-23 2007-04-10 Lg.Philips Lcd Co., Ltd Electronic device having a stacked wiring layer including Al and Ti
DE19951055B4 (en) * 1998-10-23 2017-08-24 Lg Display Co., Ltd. A method of manufacturing a substrate for electronic devices using an etchant
JP2004204266A (en) * 2002-12-24 2004-07-22 Tosoh Corp Composition for dissolving tantalum, and dissolving method using the same
CN108085684A (en) * 2017-11-23 2018-05-29 中国科学院近代物理研究所 For going the chemical decoating liquid of copper removal surface niobium coating and strip method

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