JPS5627958A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5627958A JPS5627958A JP10423679A JP10423679A JPS5627958A JP S5627958 A JPS5627958 A JP S5627958A JP 10423679 A JP10423679 A JP 10423679A JP 10423679 A JP10423679 A JP 10423679A JP S5627958 A JPS5627958 A JP S5627958A
- Authority
- JP
- Japan
- Prior art keywords
- shorting
- grounding line
- transistor
- constituted
- rom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 3
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10423679A JPS5627958A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10423679A JPS5627958A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5627958A true JPS5627958A (en) | 1981-03-18 |
Family
ID=14375319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10423679A Pending JPS5627958A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5627958A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5606193A (en) * | 1994-10-03 | 1997-02-25 | Sharp Kabushiki Kaisha | DRAM and MROM cells with similar structure |
WO1999021190A2 (en) * | 1997-10-21 | 1999-04-29 | Silicon Aquarius Incorporated | Rom and dram fabricated using a dram process |
JP2010211839A (ja) * | 2009-03-06 | 2010-09-24 | Toshiba Corp | 半導体記憶装置 |
-
1979
- 1979-08-15 JP JP10423679A patent/JPS5627958A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5606193A (en) * | 1994-10-03 | 1997-02-25 | Sharp Kabushiki Kaisha | DRAM and MROM cells with similar structure |
WO1999021190A2 (en) * | 1997-10-21 | 1999-04-29 | Silicon Aquarius Incorporated | Rom and dram fabricated using a dram process |
WO1999021190A3 (en) * | 1997-10-21 | 1999-07-29 | Silicon Aquarius Inc | Rom and dram fabricated using a dram process |
US6222216B1 (en) * | 1997-10-21 | 2001-04-24 | Silicon Aquarius, Inc. | Non-volatile and memory fabricated using a dynamic memory process and method therefor |
JP2010211839A (ja) * | 2009-03-06 | 2010-09-24 | Toshiba Corp | 半導体記憶装置 |
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