JPS5627942A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- JPS5627942A JPS5627942A JP10316679A JP10316679A JPS5627942A JP S5627942 A JPS5627942 A JP S5627942A JP 10316679 A JP10316679 A JP 10316679A JP 10316679 A JP10316679 A JP 10316679A JP S5627942 A JPS5627942 A JP S5627942A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- density
- region
- single crystal
- crystal island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10316679A JPS5627942A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10316679A JPS5627942A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627942A true JPS5627942A (en) | 1981-03-18 |
JPS6352465B2 JPS6352465B2 (ja) | 1988-10-19 |
Family
ID=14346915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10316679A Granted JPS5627942A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5627942A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6178137A (ja) * | 1984-09-26 | 1986-04-21 | Oki Electric Ind Co Ltd | 半導体装置 |
JPS62173758A (ja) * | 1986-01-27 | 1987-07-30 | Nec Corp | 半導体集積回路装置 |
JPH0327548A (ja) * | 1989-06-24 | 1991-02-05 | Matsushita Electric Works Ltd | 絶縁層分離基板およびこの基板を利用した半導体装置 |
US5034335A (en) * | 1987-05-26 | 1991-07-23 | U.S. Philips Corp. | Method of manufacturing a silicon on insulator (SOI) semiconductor device |
EP0657940A3 (en) * | 1993-12-08 | 1995-12-06 | At & T Corp | Dielectrically isolated semiconductor devices with improved characteristics. |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5029423U (ja) * | 1973-07-09 | 1975-04-03 | ||
JPS5117682A (ja) * | 1974-08-05 | 1976-02-12 | Hitachi Ltd | Handotaisochi |
-
1979
- 1979-08-15 JP JP10316679A patent/JPS5627942A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5029423U (ja) * | 1973-07-09 | 1975-04-03 | ||
JPS5117682A (ja) * | 1974-08-05 | 1976-02-12 | Hitachi Ltd | Handotaisochi |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6178137A (ja) * | 1984-09-26 | 1986-04-21 | Oki Electric Ind Co Ltd | 半導体装置 |
JPS62173758A (ja) * | 1986-01-27 | 1987-07-30 | Nec Corp | 半導体集積回路装置 |
US5034335A (en) * | 1987-05-26 | 1991-07-23 | U.S. Philips Corp. | Method of manufacturing a silicon on insulator (SOI) semiconductor device |
JPH0327548A (ja) * | 1989-06-24 | 1991-02-05 | Matsushita Electric Works Ltd | 絶縁層分離基板およびこの基板を利用した半導体装置 |
EP0657940A3 (en) * | 1993-12-08 | 1995-12-06 | At & T Corp | Dielectrically isolated semiconductor devices with improved characteristics. |
US5557125A (en) * | 1993-12-08 | 1996-09-17 | Lucent Technologies Inc. | Dielectrically isolated semiconductor devices having improved characteristics |
Also Published As
Publication number | Publication date |
---|---|
JPS6352465B2 (ja) | 1988-10-19 |
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