JPS5626477A - Variable-capacity diode manufacturing process - Google Patents

Variable-capacity diode manufacturing process

Info

Publication number
JPS5626477A
JPS5626477A JP2205680A JP2205680A JPS5626477A JP S5626477 A JPS5626477 A JP S5626477A JP 2205680 A JP2205680 A JP 2205680A JP 2205680 A JP2205680 A JP 2205680A JP S5626477 A JPS5626477 A JP S5626477A
Authority
JP
Japan
Prior art keywords
type
region
membrane
regions
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2205680A
Other languages
English (en)
Other versions
JPS5725989B2 (ja
Inventor
Nobuhiro Minotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2205680A priority Critical patent/JPS5626477A/ja
Publication of JPS5626477A publication Critical patent/JPS5626477A/ja
Publication of JPS5725989B2 publication Critical patent/JPS5725989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP2205680A 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process Granted JPS5626477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2205680A JPS5626477A (en) 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2205680A JPS5626477A (en) 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process

Publications (2)

Publication Number Publication Date
JPS5626477A true JPS5626477A (en) 1981-03-14
JPS5725989B2 JPS5725989B2 (ja) 1982-06-02

Family

ID=12072251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2205680A Granted JPS5626477A (en) 1980-02-22 1980-02-22 Variable-capacity diode manufacturing process

Country Status (1)

Country Link
JP (1) JPS5626477A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
US7276218B2 (en) 2000-01-18 2007-10-02 Valence Technology, Inc. Methods of making transition metal compounds useful as cathode active materials

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234975U (ja) * 1988-08-30 1990-03-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276218B2 (en) 2000-01-18 2007-10-02 Valence Technology, Inc. Methods of making transition metal compounds useful as cathode active materials
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

Also Published As

Publication number Publication date
JPS5725989B2 (ja) 1982-06-02

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