JPS5626430A - Mounting method for film shaped diffusing source - Google Patents

Mounting method for film shaped diffusing source

Info

Publication number
JPS5626430A
JPS5626430A JP10204579A JP10204579A JPS5626430A JP S5626430 A JPS5626430 A JP S5626430A JP 10204579 A JP10204579 A JP 10204579A JP 10204579 A JP10204579 A JP 10204579A JP S5626430 A JPS5626430 A JP S5626430A
Authority
JP
Japan
Prior art keywords
diffusing
wafers
film shaped
mounting table
sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10204579A
Other languages
Japanese (ja)
Inventor
Shizutaka Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10204579A priority Critical patent/JPS5626430A/en
Publication of JPS5626430A publication Critical patent/JPS5626430A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To eliminate misalingnment and poor contact completely, by placing a mounting table on a diffusing boat, alternately stacking film shaped diffusing sources and wafers, and loading a weight. CONSTITUTION:On the diffusing boat 1, is placed the mounting table 2a whose shape is such that semiconductor wafers 4 are not extruded. On the mounting table 2a, an N type film shaped diffusing source 3, a wafer 4, a P type film shaped diffusing source 5, and a wafer 4 are sequentially stacked. Then, the weight 2b whose shape is such that the wafers 4 are not extruded is placed thereon. In this method, since a uniformly averaged load W is applied between the wafers 4 and the diffusing sources 3 and 5, the misalignment and poor contact between the wafers 4 and the diffusing sources 3 and 5 are completely eliminated. Therefore, semiconductor devices having uniform and more stabilized quality can be obtained.
JP10204579A 1979-08-09 1979-08-09 Mounting method for film shaped diffusing source Pending JPS5626430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10204579A JPS5626430A (en) 1979-08-09 1979-08-09 Mounting method for film shaped diffusing source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10204579A JPS5626430A (en) 1979-08-09 1979-08-09 Mounting method for film shaped diffusing source

Publications (1)

Publication Number Publication Date
JPS5626430A true JPS5626430A (en) 1981-03-14

Family

ID=14316793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10204579A Pending JPS5626430A (en) 1979-08-09 1979-08-09 Mounting method for film shaped diffusing source

Country Status (1)

Country Link
JP (1) JPS5626430A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033394U (en) * 1989-05-31 1991-01-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033394U (en) * 1989-05-31 1991-01-14

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