JPS5625967A - Sputtering electrode of sputtering apparatus - Google Patents

Sputtering electrode of sputtering apparatus

Info

Publication number
JPS5625967A
JPS5625967A JP10018579A JP10018579A JPS5625967A JP S5625967 A JPS5625967 A JP S5625967A JP 10018579 A JP10018579 A JP 10018579A JP 10018579 A JP10018579 A JP 10018579A JP S5625967 A JPS5625967 A JP S5625967A
Authority
JP
Japan
Prior art keywords
target
magnetic
sputtering
electrode
phi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10018579A
Other languages
Japanese (ja)
Other versions
JPS611502B2 (en
Inventor
Naokichi Hosokawa
Tsutomu Tsukada
Takashi Misumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP10018579A priority Critical patent/JPS5625967A/en
Publication of JPS5625967A publication Critical patent/JPS5625967A/en
Publication of JPS611502B2 publication Critical patent/JPS611502B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Abstract

PURPOSE:To form the force of magnetic field and distribution form of line of magnetic force the same to nonmagnetic target and to prevent lowering of sputtering effect, by making the thickness and length of closed magnetic circuit of the target to the value of characteristics, on occasion of constructing the target of sputtering apparatus by strong magnetic body. CONSTITUTION:Sputtering electrode is constructed by providing the magnetic apparatus which is composed of the outside permanent magnet 11, the inside permanent magnet 21 and the yoke 3, in the electrode housing 10 and the flat board target 21 made of strong magnetic material, such as Fe, Ni, Co, having the thickness t, is provided on said electrode. Magnetic flux phi' of the magnets 11, 21 and the magnetic flux phi calculated in terms of the case when the target 21 is nonmagnetic body, are formed the relation shown in the formula phi'=Bstl+phi, where Bs is saturated magnetic flux density of the target 21 and l is the length of effective closed magnetic circuit and then, tunnel-shaped circuit is formed by passing a part of line of magnetic force 41 in the target 21 and flying the residual line of magnetic force 42 out of the target 21. Same sputtering effect to the case of nonmagnetic body, can be obtained even when the material of the target 21 is strong magnetic body.
JP10018579A 1979-08-08 1979-08-08 Sputtering electrode of sputtering apparatus Granted JPS5625967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10018579A JPS5625967A (en) 1979-08-08 1979-08-08 Sputtering electrode of sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10018579A JPS5625967A (en) 1979-08-08 1979-08-08 Sputtering electrode of sputtering apparatus

Publications (2)

Publication Number Publication Date
JPS5625967A true JPS5625967A (en) 1981-03-12
JPS611502B2 JPS611502B2 (en) 1986-01-17

Family

ID=14267240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10018579A Granted JPS5625967A (en) 1979-08-08 1979-08-08 Sputtering electrode of sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS5625967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760538A (en) * 1980-09-26 1982-04-12 Seiko Epson Corp Manufacture for magnetic recording medium

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148769A (en) * 1979-05-04 1980-11-19 Toshiba Corp Magnetron type sputtering apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148769A (en) * 1979-05-04 1980-11-19 Toshiba Corp Magnetron type sputtering apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760538A (en) * 1980-09-26 1982-04-12 Seiko Epson Corp Manufacture for magnetic recording medium
JPH0123857B2 (en) * 1980-09-26 1989-05-09 Seiko Epson Corp

Also Published As

Publication number Publication date
JPS611502B2 (en) 1986-01-17

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