JPS5623270A - Temperature rise preventing method for substrate of vapor deposition apparatus - Google Patents

Temperature rise preventing method for substrate of vapor deposition apparatus

Info

Publication number
JPS5623270A
JPS5623270A JP9920979A JP9920979A JPS5623270A JP S5623270 A JPS5623270 A JP S5623270A JP 9920979 A JP9920979 A JP 9920979A JP 9920979 A JP9920979 A JP 9920979A JP S5623270 A JPS5623270 A JP S5623270A
Authority
JP
Japan
Prior art keywords
substrate
vapor deposition
infrared rays
deposition apparatus
temperature rise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9920979A
Other languages
Japanese (ja)
Inventor
Kazuo Tatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9920979A priority Critical patent/JPS5623270A/en
Publication of JPS5623270A publication Critical patent/JPS5623270A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a vapor deposition film having desired characteristic for regulating the temp. of the substrate not to exceed a desired temp., by providing a reflection plate in the passage of infrared rays between the substrate and bell jar in the vapor deposition apparatus. CONSTITUTION:A reflextion mirror 4 is provided between a transparent substrate 2 and a bell jar 5 on occasion of performing vapor deposition of transparent film on the transparent substrate 2 made of glass etc. which is attached to the substrate holder 3 in the vapor deposition apparatus. As a result, the substrate 2 is heated by the infrared rays from the evaporation source 1, and the direction of a part of the infrared rays passed through the substrate 2 is changed by the mirror 4. Accordingly, temperature rise of the substrate 2 is prevented, and vapor deposited film having desired characteristic is formed because the substrate 2 is not heated again by the infrared rays since the rays are not reflected by the wall of the bell jar after passing through the substrate 2. It is more effective to jointly use cooling method, such as with water.
JP9920979A 1979-08-02 1979-08-02 Temperature rise preventing method for substrate of vapor deposition apparatus Pending JPS5623270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9920979A JPS5623270A (en) 1979-08-02 1979-08-02 Temperature rise preventing method for substrate of vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9920979A JPS5623270A (en) 1979-08-02 1979-08-02 Temperature rise preventing method for substrate of vapor deposition apparatus

Publications (1)

Publication Number Publication Date
JPS5623270A true JPS5623270A (en) 1981-03-05

Family

ID=14241253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9920979A Pending JPS5623270A (en) 1979-08-02 1979-08-02 Temperature rise preventing method for substrate of vapor deposition apparatus

Country Status (1)

Country Link
JP (1) JPS5623270A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49135890A (en) * 1973-05-02 1974-12-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49135890A (en) * 1973-05-02 1974-12-27

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