JPS61106766A - Spatter device - Google Patents
Spatter deviceInfo
- Publication number
- JPS61106766A JPS61106766A JP22811684A JP22811684A JPS61106766A JP S61106766 A JPS61106766 A JP S61106766A JP 22811684 A JP22811684 A JP 22811684A JP 22811684 A JP22811684 A JP 22811684A JP S61106766 A JPS61106766 A JP S61106766A
- Authority
- JP
- Japan
- Prior art keywords
- black
- base material
- thermal radiation
- target
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、膜形成等を行うスパッタ装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a sputtering apparatus for forming a film and the like.
従来の技術
以下第2図を参照しながら従来のスパッタ装置の一例に
ついて説明する。従来のスパッタ装置の真空槽壁2及び
内部部品は成形のしやすさ、真空槽内を高真空に到達で
きるという理由でたとえばステンレス鋼が用い、られて
きた。2. Description of the Related Art An example of a conventional sputtering apparatus will be described below with reference to FIG. For example, stainless steel has been used for the vacuum chamber wall 2 and internal parts of conventional sputtering apparatuses because of its ease of molding and the ability to achieve a high vacuum inside the vacuum chamber.
しかし、熱輻射又は光の反射を防止するための構成はと
られておらずスパッタ蒸着時にターゲット4により発せ
られる熱輻射又はプラズマにより発生する光6がステン
レス表面で反射されて基板らに照射され、基板温度の上
昇をまねき、そのため基板冷却機構が必要であった。However, no structure is adopted to prevent thermal radiation or light reflection, and the thermal radiation emitted by the target 4 during sputter deposition or the light 6 generated by plasma is reflected by the stainless steel surface and irradiated onto the substrates. This leads to an increase in the substrate temperature, and therefore a substrate cooling mechanism is required.
発明が解決しようとする問題点
このような従来のスパッタ装置では装置の部材表面の熱
輻射あるいは光の反射により基板温度が上昇し、基板冷
却機構を使うなど制御が複雑となる。又、このために膜
むらがあられれるため、基板の大面積化あるいは大量生
産が困難であった。Problems to be Solved by the Invention In such conventional sputtering equipment, the temperature of the substrate increases due to thermal radiation or reflection of light on the surface of the members of the equipment, and control becomes complicated, such as by using a substrate cooling mechanism. Moreover, this causes film unevenness, making it difficult to increase the area of the substrate or mass-produce it.
さらに、膜特性自体にも悪い影響があられれていた。又
、スパッタ装置を長時間使用する場合時間経過に伴い基
板の温度上昇がおこり均一な膜作成が困難であった。Furthermore, the film properties themselves were also adversely affected. Furthermore, when a sputtering device is used for a long time, the temperature of the substrate increases over time, making it difficult to form a uniform film.
本発明はかかる点に鑑みてなされたもので、簡易な構成
で熱輻射および光の反射の影響が非常に少ないスパッタ
装置を提供することを目的として1゛・
いる。The present invention has been made in view of the above points, and an object of the present invention is to provide a sputtering apparatus having a simple configuration and having very little influence of thermal radiation and light reflection.
There is.
問題点を解決するだめの手段
本発明は上記問題点を解決するため、真空槽内部の一部
を熱輻射又は光の反射を防止する表面を持つ素材で構成
する。また、特にステンレス鋼表面を処理し黒色とした
ものを用いても実用性が犬きい。また、ターゲット部に
一番近いターゲットホルダーを少なくとも表面が黒色で
ある素材とすると効果は極めて大きい。また面積の大き
い真空槽内壁を少なくとも表面が黒色である素材で構成
すると効果はより大きい。また基板に一番近い基板ホル
ダーを少なくとも表面が黒色である素材で構成すると熱
輻射及び光の基板に与える影響は少ない。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention constructs a part of the interior of the vacuum chamber from a material having a surface that prevents heat radiation or light reflection. In addition, it is highly practical to use stainless steel that has been treated to have a black surface. Further, if the target holder closest to the target part is made of a material with at least a black surface, the effect is extremely large. Furthermore, the effect is even greater if the inner wall of the vacuum chamber, which has a large area, is made of a material whose surface is at least black. Furthermore, if the substrate holder closest to the substrate is made of a material with at least a black surface, the effects of thermal radiation and light on the substrate will be reduced.
作用
本発明は上記構成により、ターゲット表面の摂氏数千度
になる発熱の影響を特にターゲット部あるいは真空槽内
壁あるいはターゲットホルダ一部に熱輻射又は光の反射
を防止する表面を持つ素材を用いることにより反射を最
小限におさえ、基板に対する熱の影響を除去し、基板上
に形成される 1膜の膜むらをなくする。又、
長時間スパッタ装置を使用しても基板温度が安定してい
るため、均一な膜が作成される。また大面積の基板でも
均一な膜が作成でき、大量生産も可能となった。また、
熱輻射および光の反射を防止するために黒色に表面処理
したステンレスを用いることによって容易に高真空に達
することができる。Effects The present invention uses a material having a surface that prevents heat radiation or light reflection on the target portion, the inner wall of the vacuum chamber, or a part of the target holder, in particular, to reduce the effects of heat generation of several thousand degrees Celsius on the target surface. This minimizes reflection, eliminates the influence of heat on the substrate, and eliminates unevenness in a single film formed on the substrate. or,
Even if the sputtering equipment is used for a long time, the substrate temperature remains stable, so a uniform film can be created. Furthermore, uniform films can be created even on large-area substrates, making mass production possible. Also,
High vacuum can be easily reached by using stainless steel with black surface treatment to prevent heat radiation and light reflection.
実施例
第1図は本発明のスパッタ装置の一実施例を示す断面図
である。真空槽内部に、熱輻射及び光の反射をおさえる
ために硫酸および重クロム酸ソーダで処理した表面の黒
いステンレス鋼でターゲットホルダ一部1.真空槽内壁
2.基板ホルダー3のターゲットホルダー側の部分をお
おう。たとえばSlを02ガスでガラス基板6上にスパ
ッタ蒸着する時にSiターゲット4から発せられた熱輻
射および光5が上記表面処理ステンレスで吸収されガラ
ス基板6への熱の影響が最小限におさえられ、このため
、基板冷却機構の必要がなくなり、形成される膜の均一
化がはかられ、長時間安定した膜形成ができ基板の大面
積化および大量生産が可能となった。Embodiment FIG. 1 is a sectional view showing an embodiment of the sputtering apparatus of the present invention. Inside the vacuum chamber, a part of the target holder is made of stainless steel with a black surface treated with sulfuric acid and sodium dichromate to suppress heat radiation and light reflection. Vacuum chamber inner wall 2. Cover the part of the substrate holder 3 on the target holder side. For example, when sputter-depositing Sl onto the glass substrate 6 using 02 gas, the thermal radiation and light 5 emitted from the Si target 4 are absorbed by the surface-treated stainless steel, and the influence of heat on the glass substrate 6 is minimized. This eliminates the need for a substrate cooling mechanism, ensures uniformity of the formed film, enables stable film formation over a long period of time, and makes it possible to increase the area of the substrate and mass-produce it.
マタ、ステンレス鋼を用いることにより、容易に高真空
が達成できる。By using stainless steel, high vacuum can be easily achieved.
また、たとえば、ステンレス鋼の表面処理のかわシに黒
色アルマイトを形成し、たとえば真空槽内壁、ターゲッ
トホルダーにはりつけることによって、蒸着時に発せら
れる熱輻射および光の反射をおさえ膜への熱の影響を最
小限におさえることができる。このように、素材の種類
にはよらず少なくとも表面が黒色の素材であればこの発
明に適用することができる。In addition, for example, by forming black alumite on a stainless steel surface treatment plate and attaching it to the inner wall of a vacuum chamber or target holder, for example, thermal radiation and light reflection emitted during vapor deposition can be suppressed, and the influence of heat on the film can be reduced. can be kept to a minimum. In this way, the present invention can be applied to any material that has at least a black surface, regardless of the type of material.
発明の効果
以上述べてきたように、本発明によれば、簡単に基板に
対する熱の影響が除去され、均一な膜が大量生産でき実
用的にきわめて有用である。Effects of the Invention As described above, according to the present invention, the influence of heat on the substrate can be easily removed, uniform films can be mass-produced, and the present invention is extremely useful in practice.
【図面の簡単な説明】
第1図は本発明の一実施例におけるスパッタ装置の断面
図、第2図は従来のスパッタ装置の断面図である。
1・・・・・・ターゲットホルダー、2・−・・・・真
空槽内壁、3・・・・・・基板ホルダー、4・・・・・
・ターゲット、6・・・・・・熱輻射および光、6・・
・・・・基板。
第1図
第2図
f ター碍)ふルダゝ
2臭乞縛肉屋
3 基叛I、ルヅ°“−
4グーT・′ント
、S 臂i喘肘右・よび”九
6 碁石ξBRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional sputtering apparatus. 1...Target holder, 2...Inner wall of vacuum chamber, 3...Substrate holder, 4...
・Target, 6...Thermal radiation and light, 6...
····substrate. Fig. 1 Fig. 2 f Tarpai) Folder 2 Stinking Butcher 3 Kishu I, Ruzu°"- 4 Gu T・'nt, S Knee, Elbow Right, Call" 96 Go Stone ξ
Claims (7)
輻射又はプラズマにより発生する光が直接当る真空槽内
部のすくなくとも一部を熱輻射又は光の反射を防止する
表面をもつ素材で構成したスパッタ装置。(1) A sputtering device in which at least a part of the interior of the vacuum chamber, which is directly exposed to thermal radiation emitted by a target or light generated by plasma during sputter deposition, is made of a material having a surface that prevents thermal radiation or light reflection.
成した特許請求の範囲第1項記載のスパッタ装置。(2) The sputtering apparatus according to claim 1, wherein at least a part of the interior of the vacuum chamber is made of a black material.
ス鋼で構成した特許請求の範囲第1項記載のスパッタ装
置。(3) The sputtering apparatus according to claim 1, wherein at least a part of the inside of the vacuum chamber is made of black stainless steel.
を貼り付けた構成とした特許請求の範囲第1項記載のス
パッタ装置。(4) The sputtering apparatus according to claim 1, wherein black alumite is pasted on at least a part of the inside of the vacuum chamber.
ある素材とした特許請求の範囲第1項記載のスパッタ装
置。(5) The sputtering apparatus according to claim 1, wherein the target holder portion is made of a material having at least a black surface.
色である素材とした特許請求の範囲第1項記載のスパッ
タ装置。(6) The sputtering apparatus according to claim 1, wherein all or part of the inner wall of the vacuum chamber is made of a material having at least a black surface.
材とした特許請求の範囲第1項記載のスパッタ装置。(7) The sputtering apparatus according to claim 1, wherein the substrate holder is made of a material having at least a black surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22811684A JPS61106766A (en) | 1984-10-30 | 1984-10-30 | Spatter device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22811684A JPS61106766A (en) | 1984-10-30 | 1984-10-30 | Spatter device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61106766A true JPS61106766A (en) | 1986-05-24 |
Family
ID=16871451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22811684A Pending JPS61106766A (en) | 1984-10-30 | 1984-10-30 | Spatter device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61106766A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011027691A1 (en) * | 2009-09-01 | 2011-03-10 | 東京エレクトロン株式会社 | Sputtering device |
JP2015000994A (en) * | 2013-06-13 | 2015-01-05 | 株式会社アルバック | Vacuum treatment apparatus |
-
1984
- 1984-10-30 JP JP22811684A patent/JPS61106766A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011027691A1 (en) * | 2009-09-01 | 2011-03-10 | 東京エレクトロン株式会社 | Sputtering device |
CN102575338A (en) * | 2009-09-01 | 2012-07-11 | 东京毅力科创株式会社 | Sputtering device |
JP5374590B2 (en) * | 2009-09-01 | 2013-12-25 | 東京エレクトロン株式会社 | Sputtering equipment |
JP2015000994A (en) * | 2013-06-13 | 2015-01-05 | 株式会社アルバック | Vacuum treatment apparatus |
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