JPS561768A - Voltage detection thyristor device - Google Patents

Voltage detection thyristor device

Info

Publication number
JPS561768A
JPS561768A JP7532879A JP7532879A JPS561768A JP S561768 A JPS561768 A JP S561768A JP 7532879 A JP7532879 A JP 7532879A JP 7532879 A JP7532879 A JP 7532879A JP S561768 A JPS561768 A JP S561768A
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
voltage
voltage detection
main electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7532879A
Other languages
Japanese (ja)
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7532879A priority Critical patent/JPS561768A/en
Publication of JPS561768A publication Critical patent/JPS561768A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
  • Power Conversion In General (AREA)

Abstract

PURPOSE:To obtain the device easy to change the working characteristics according to the usage by means of the voltage detection node being connected to the fifth semiconductor which forms the fourth connection working in cooperation with the gate layer. CONSTITUTION:The semiconductor element section 50 has the thyristor section comprising the first semiconductor layer 1, the second semiconductor layer 2, the third semiconductor layer 3 and the fourth semiconductor layer 4 sandwitched by the electrode contacts A and K is equipped with the fifth semiconductor 5 in such a manner as to form the fourth connection J4 in cooperation with the third semiconductor layer 3 (gate layer) and the contact K2 for controlling thereof. When the voltage between the voltage detection node K2 and the second main electrode K1 exceeds the specified level, conduction is made between the first main electrode A and the second main electrode K1. If such an element section 50 is used for the lighting control circuit or the like of the discharge lamp device as illustrated, the working voltage can be adjusted by the flat voltage circuit 621 and 622 while the time response property can be adjusted with the capacitor 623.
JP7532879A 1979-06-14 1979-06-14 Voltage detection thyristor device Pending JPS561768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7532879A JPS561768A (en) 1979-06-14 1979-06-14 Voltage detection thyristor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7532879A JPS561768A (en) 1979-06-14 1979-06-14 Voltage detection thyristor device

Publications (1)

Publication Number Publication Date
JPS561768A true JPS561768A (en) 1981-01-09

Family

ID=13573074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7532879A Pending JPS561768A (en) 1979-06-14 1979-06-14 Voltage detection thyristor device

Country Status (1)

Country Link
JP (1) JPS561768A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4860586A (en) * 1971-11-29 1973-08-24
JPS4936290A (en) * 1972-03-02 1974-04-04
JPS5027903U (en) * 1973-07-11 1975-03-31
JPS5391589A (en) * 1977-01-21 1978-08-11 Mitsubishi Electric Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4860586A (en) * 1971-11-29 1973-08-24
JPS4936290A (en) * 1972-03-02 1974-04-04
JPS5027903U (en) * 1973-07-11 1975-03-31
JPS5391589A (en) * 1977-01-21 1978-08-11 Mitsubishi Electric Corp Semiconductor device

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