JPS561768A - Voltage detection thyristor device - Google Patents
Voltage detection thyristor deviceInfo
- Publication number
- JPS561768A JPS561768A JP7532879A JP7532879A JPS561768A JP S561768 A JPS561768 A JP S561768A JP 7532879 A JP7532879 A JP 7532879A JP 7532879 A JP7532879 A JP 7532879A JP S561768 A JPS561768 A JP S561768A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- voltage
- voltage detection
- main electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Circuit Arrangements For Discharge Lamps (AREA)
- Power Conversion In General (AREA)
Abstract
PURPOSE:To obtain the device easy to change the working characteristics according to the usage by means of the voltage detection node being connected to the fifth semiconductor which forms the fourth connection working in cooperation with the gate layer. CONSTITUTION:The semiconductor element section 50 has the thyristor section comprising the first semiconductor layer 1, the second semiconductor layer 2, the third semiconductor layer 3 and the fourth semiconductor layer 4 sandwitched by the electrode contacts A and K is equipped with the fifth semiconductor 5 in such a manner as to form the fourth connection J4 in cooperation with the third semiconductor layer 3 (gate layer) and the contact K2 for controlling thereof. When the voltage between the voltage detection node K2 and the second main electrode K1 exceeds the specified level, conduction is made between the first main electrode A and the second main electrode K1. If such an element section 50 is used for the lighting control circuit or the like of the discharge lamp device as illustrated, the working voltage can be adjusted by the flat voltage circuit 621 and 622 while the time response property can be adjusted with the capacitor 623.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7532879A JPS561768A (en) | 1979-06-14 | 1979-06-14 | Voltage detection thyristor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7532879A JPS561768A (en) | 1979-06-14 | 1979-06-14 | Voltage detection thyristor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS561768A true JPS561768A (en) | 1981-01-09 |
Family
ID=13573074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7532879A Pending JPS561768A (en) | 1979-06-14 | 1979-06-14 | Voltage detection thyristor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS561768A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4860586A (en) * | 1971-11-29 | 1973-08-24 | ||
JPS4936290A (en) * | 1972-03-02 | 1974-04-04 | ||
JPS5027903U (en) * | 1973-07-11 | 1975-03-31 | ||
JPS5391589A (en) * | 1977-01-21 | 1978-08-11 | Mitsubishi Electric Corp | Semiconductor device |
-
1979
- 1979-06-14 JP JP7532879A patent/JPS561768A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4860586A (en) * | 1971-11-29 | 1973-08-24 | ||
JPS4936290A (en) * | 1972-03-02 | 1974-04-04 | ||
JPS5027903U (en) * | 1973-07-11 | 1975-03-31 | ||
JPS5391589A (en) * | 1977-01-21 | 1978-08-11 | Mitsubishi Electric Corp | Semiconductor device |
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