JPS56169372A - Flexible film substrate amorphous silicon solar battery - Google Patents

Flexible film substrate amorphous silicon solar battery

Info

Publication number
JPS56169372A
JPS56169372A JP7134180A JP7134180A JPS56169372A JP S56169372 A JPS56169372 A JP S56169372A JP 7134180 A JP7134180 A JP 7134180A JP 7134180 A JP7134180 A JP 7134180A JP S56169372 A JPS56169372 A JP S56169372A
Authority
JP
Japan
Prior art keywords
film
substrate
solar battery
film substrate
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7134180A
Other languages
Japanese (ja)
Other versions
JPH0139229B2 (en
Inventor
Hiroshi Okaniwa
Kenji Nakatani
Mitsuo Asano
Wataru Yamamoto
Keizo Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP7134180A priority Critical patent/JPS56169372A/en
Publication of JPS56169372A publication Critical patent/JPS56169372A/en
Publication of JPH0139229B2 publication Critical patent/JPH0139229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a film having excellent size stability and rigidity by employing a flexible macromolecular film made of aromatic polyamide polymer for the substrate. CONSTITUTION:A film made of aromatic polyamide polymer is selected for the flexible macromolecular film substrate of an amorphous Si solar battery. This film has excellent thermal shrinkage rate, e.g., less than 0.7% at high temperature, e.g., 250-300 deg.C. This film also has excellent property of approximately equal to initial Young's modulus at the normal temperature of the polyamide resin film proposed as the flexible macromolecular film substrate at hot condition, e.g., 300 deg.C. Thus, the substrate having excellent size stability as well as rigidity can be obtained.
JP7134180A 1980-05-30 1980-05-30 Flexible film substrate amorphous silicon solar battery Granted JPS56169372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7134180A JPS56169372A (en) 1980-05-30 1980-05-30 Flexible film substrate amorphous silicon solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7134180A JPS56169372A (en) 1980-05-30 1980-05-30 Flexible film substrate amorphous silicon solar battery

Publications (2)

Publication Number Publication Date
JPS56169372A true JPS56169372A (en) 1981-12-26
JPH0139229B2 JPH0139229B2 (en) 1989-08-18

Family

ID=13457695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7134180A Granted JPS56169372A (en) 1980-05-30 1980-05-30 Flexible film substrate amorphous silicon solar battery

Country Status (1)

Country Link
JP (1) JPS56169372A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124168A (en) * 1984-11-20 1986-06-11 Matsushita Electric Ind Co Ltd Contact type image sensor
JPH01309385A (en) * 1988-06-08 1989-12-13 Asahi Chem Ind Co Ltd Solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124168A (en) * 1984-11-20 1986-06-11 Matsushita Electric Ind Co Ltd Contact type image sensor
JPH01309385A (en) * 1988-06-08 1989-12-13 Asahi Chem Ind Co Ltd Solar cell

Also Published As

Publication number Publication date
JPH0139229B2 (en) 1989-08-18

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