JPS56169372A - Flexible film substrate amorphous silicon solar battery - Google Patents
Flexible film substrate amorphous silicon solar batteryInfo
- Publication number
- JPS56169372A JPS56169372A JP7134180A JP7134180A JPS56169372A JP S56169372 A JPS56169372 A JP S56169372A JP 7134180 A JP7134180 A JP 7134180A JP 7134180 A JP7134180 A JP 7134180A JP S56169372 A JPS56169372 A JP S56169372A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- solar battery
- film substrate
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 2
- 239000004760 aramid Substances 0.000 abstract 2
- 229920003235 aromatic polyamide Polymers 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- 229920006122 polyamide resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a film having excellent size stability and rigidity by employing a flexible macromolecular film made of aromatic polyamide polymer for the substrate. CONSTITUTION:A film made of aromatic polyamide polymer is selected for the flexible macromolecular film substrate of an amorphous Si solar battery. This film has excellent thermal shrinkage rate, e.g., less than 0.7% at high temperature, e.g., 250-300 deg.C. This film also has excellent property of approximately equal to initial Young's modulus at the normal temperature of the polyamide resin film proposed as the flexible macromolecular film substrate at hot condition, e.g., 300 deg.C. Thus, the substrate having excellent size stability as well as rigidity can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7134180A JPS56169372A (en) | 1980-05-30 | 1980-05-30 | Flexible film substrate amorphous silicon solar battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7134180A JPS56169372A (en) | 1980-05-30 | 1980-05-30 | Flexible film substrate amorphous silicon solar battery |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56169372A true JPS56169372A (en) | 1981-12-26 |
JPH0139229B2 JPH0139229B2 (en) | 1989-08-18 |
Family
ID=13457695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7134180A Granted JPS56169372A (en) | 1980-05-30 | 1980-05-30 | Flexible film substrate amorphous silicon solar battery |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56169372A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124168A (en) * | 1984-11-20 | 1986-06-11 | Matsushita Electric Ind Co Ltd | Contact type image sensor |
JPH01309385A (en) * | 1988-06-08 | 1989-12-13 | Asahi Chem Ind Co Ltd | Solar cell |
-
1980
- 1980-05-30 JP JP7134180A patent/JPS56169372A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124168A (en) * | 1984-11-20 | 1986-06-11 | Matsushita Electric Ind Co Ltd | Contact type image sensor |
JPH01309385A (en) * | 1988-06-08 | 1989-12-13 | Asahi Chem Ind Co Ltd | Solar cell |
Also Published As
Publication number | Publication date |
---|---|
JPH0139229B2 (en) | 1989-08-18 |
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