JPS56165321A - Electron beam projection system - Google Patents

Electron beam projection system

Info

Publication number
JPS56165321A
JPS56165321A JP6858880A JP6858880A JPS56165321A JP S56165321 A JPS56165321 A JP S56165321A JP 6858880 A JP6858880 A JP 6858880A JP 6858880 A JP6858880 A JP 6858880A JP S56165321 A JPS56165321 A JP S56165321A
Authority
JP
Japan
Prior art keywords
pattern
speed
region
electron beam
drawn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6858880A
Other languages
Japanese (ja)
Other versions
JPS6230491B2 (en
Inventor
Seigo Igaki
Yoshiaki Goto
Yasuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6858880A priority Critical patent/JPS56165321A/en
Publication of JPS56165321A publication Critical patent/JPS56165321A/en
Publication of JPS6230491B2 publication Critical patent/JPS6230491B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To draw a pattern surely at a high speed when electron beam projection is to be performed in accordance with the pattern package memory system by a method wherein scanning speed at beam-ON time is made as changeable. CONSTITUTION:A means to set the circumferential region 2 of the pattern to be drawn and a clock frequency changing control means are provided supplementally to a pattern generation controller of the pattern package memory system electron beam projector, and scanning speed at beam-ON time is made as changeable controlling clock frequency in accordance with the position of scanning. When a chevcon pattern CP is to be drawn, a rectangular region QR adjoining at the outer circumference thereof is set, the beam-OFF region (the sands) is scanned at the maximum speed, and the circumferential region 2 is scanned at a speed lower than the speed in the main region 3 to apply the sufficient quantity of projection. Accordingly the prescribed pattern can be drawn surely at a high speed.
JP6858880A 1980-05-23 1980-05-23 Electron beam projection system Granted JPS56165321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6858880A JPS56165321A (en) 1980-05-23 1980-05-23 Electron beam projection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6858880A JPS56165321A (en) 1980-05-23 1980-05-23 Electron beam projection system

Publications (2)

Publication Number Publication Date
JPS56165321A true JPS56165321A (en) 1981-12-18
JPS6230491B2 JPS6230491B2 (en) 1987-07-02

Family

ID=13378097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6858880A Granted JPS56165321A (en) 1980-05-23 1980-05-23 Electron beam projection system

Country Status (1)

Country Link
JP (1) JPS56165321A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288406B1 (en) * 1998-03-06 2001-09-11 Dupont Photomasks, Inc. Electron beam lithography system having variable writing speed

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187797A (en) * 1987-01-29 1988-08-03 Matsushita Electric Ind Co Ltd Home control device
JPH0785596B2 (en) * 1988-03-09 1995-09-13 三菱電機株式会社 Remote monitoring control system
JPH03293893A (en) * 1990-04-11 1991-12-25 Mitsubishi Electric Corp Home bus system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119869A (en) * 1976-03-31 1977-10-07 Fujitsu Ltd Electronic beam exposure
JPS54122979A (en) * 1978-03-16 1979-09-22 Cho Lsi Gijutsu Kenkyu Kumiai Electron beam exposure device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119869A (en) * 1976-03-31 1977-10-07 Fujitsu Ltd Electronic beam exposure
JPS54122979A (en) * 1978-03-16 1979-09-22 Cho Lsi Gijutsu Kenkyu Kumiai Electron beam exposure device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288406B1 (en) * 1998-03-06 2001-09-11 Dupont Photomasks, Inc. Electron beam lithography system having variable writing speed

Also Published As

Publication number Publication date
JPS6230491B2 (en) 1987-07-02

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