JPS56161654A - Semiconductor ic device and manufacture thereof - Google Patents

Semiconductor ic device and manufacture thereof

Info

Publication number
JPS56161654A
JPS56161654A JP6555680A JP6555680A JPS56161654A JP S56161654 A JPS56161654 A JP S56161654A JP 6555680 A JP6555680 A JP 6555680A JP 6555680 A JP6555680 A JP 6555680A JP S56161654 A JPS56161654 A JP S56161654A
Authority
JP
Japan
Prior art keywords
layers
injected
masks
oxide
resist masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6555680A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0115147B2 (enrdf_load_stackoverflow
Inventor
Hiroyuki Sakai
Tsutomu Fujita
Toyoki Takemoto
Haruyasu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6555680A priority Critical patent/JPS56161654A/ja
Publication of JPS56161654A publication Critical patent/JPS56161654A/ja
Publication of JPH0115147B2 publication Critical patent/JPH0115147B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP6555680A 1980-05-16 1980-05-16 Semiconductor ic device and manufacture thereof Granted JPS56161654A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6555680A JPS56161654A (en) 1980-05-16 1980-05-16 Semiconductor ic device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6555680A JPS56161654A (en) 1980-05-16 1980-05-16 Semiconductor ic device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56161654A true JPS56161654A (en) 1981-12-12
JPH0115147B2 JPH0115147B2 (enrdf_load_stackoverflow) 1989-03-15

Family

ID=13290387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6555680A Granted JPS56161654A (en) 1980-05-16 1980-05-16 Semiconductor ic device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56161654A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110074A (ja) * 1981-12-23 1983-06-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS6252966A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 半導体装置の製造方法
US4887130A (en) * 1985-10-07 1989-12-12 Minolta Camera Kabushiki Kaisha Electrostatic latent image developing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154283A (en) * 1978-05-25 1979-12-05 Ibm Lateral transistor structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154283A (en) * 1978-05-25 1979-12-05 Ibm Lateral transistor structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110074A (ja) * 1981-12-23 1983-06-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS6252966A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 半導体装置の製造方法
US4887130A (en) * 1985-10-07 1989-12-12 Minolta Camera Kabushiki Kaisha Electrostatic latent image developing apparatus
US5044313A (en) * 1985-10-07 1991-09-03 Minolta Camera Kabushiki Kaisha Electrostatic latent image developing apparatus

Also Published As

Publication number Publication date
JPH0115147B2 (enrdf_load_stackoverflow) 1989-03-15

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