JPS56157076A - Receiving device for multi-wavelengh light - Google Patents

Receiving device for multi-wavelengh light

Info

Publication number
JPS56157076A
JPS56157076A JP6129880A JP6129880A JPS56157076A JP S56157076 A JPS56157076 A JP S56157076A JP 6129880 A JP6129880 A JP 6129880A JP 6129880 A JP6129880 A JP 6129880A JP S56157076 A JPS56157076 A JP S56157076A
Authority
JP
Japan
Prior art keywords
type
light
impurity density
receiving device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6129880A
Other languages
Japanese (ja)
Inventor
Takashi Andou
Masashi Yamaguchi
Hideo Sugiura
Akinori Katsui
Zeio Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6129880A priority Critical patent/JPS56157076A/en
Publication of JPS56157076A publication Critical patent/JPS56157076A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To enable the detection of numerous different wave length lights and contrive the small size by a method wherein light detecting cells are integrated in the same substrate. CONSTITUTION:A P<+> type (N<+> type) layer 9 of high impurity density which is changed in a junction depth (d) is formed on the surface of an N type (P type) semiconductor 8 of low impurity density by selective diffusion and selective epitaxial growth to obtain the light detection cell of a P<+>N(N<+>P) junction structure. The multi-wavelength light receiving device is constructed by further forming an isolation layer 10 and electrodes 11, 12. In this structure, an effective carrier generating region, that is, received light wavelength can be selected depending on the high impurity density layer thickness.
JP6129880A 1980-05-09 1980-05-09 Receiving device for multi-wavelengh light Pending JPS56157076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6129880A JPS56157076A (en) 1980-05-09 1980-05-09 Receiving device for multi-wavelengh light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6129880A JPS56157076A (en) 1980-05-09 1980-05-09 Receiving device for multi-wavelengh light

Publications (1)

Publication Number Publication Date
JPS56157076A true JPS56157076A (en) 1981-12-04

Family

ID=13167139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6129880A Pending JPS56157076A (en) 1980-05-09 1980-05-09 Receiving device for multi-wavelengh light

Country Status (1)

Country Link
JP (1) JPS56157076A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS471231A (en) * 1970-06-29 1972-01-21
JPS4846280A (en) * 1971-10-05 1973-07-02

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS471231A (en) * 1970-06-29 1972-01-21
JPS4846280A (en) * 1971-10-05 1973-07-02

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