JPS56157066A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56157066A
JPS56157066A JP6141980A JP6141980A JPS56157066A JP S56157066 A JPS56157066 A JP S56157066A JP 6141980 A JP6141980 A JP 6141980A JP 6141980 A JP6141980 A JP 6141980A JP S56157066 A JPS56157066 A JP S56157066A
Authority
JP
Japan
Prior art keywords
melting point
thin film
high melting
formation
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6141980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241429B2 (enrdf_load_stackoverflow
Inventor
Tadatoshi Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6141980A priority Critical patent/JPS56157066A/ja
Publication of JPS56157066A publication Critical patent/JPS56157066A/ja
Publication of JPS6241429B2 publication Critical patent/JPS6241429B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Bipolar Transistors (AREA)
JP6141980A 1980-05-09 1980-05-09 Manufacture of semiconductor device Granted JPS56157066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6141980A JPS56157066A (en) 1980-05-09 1980-05-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6141980A JPS56157066A (en) 1980-05-09 1980-05-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56157066A true JPS56157066A (en) 1981-12-04
JPS6241429B2 JPS6241429B2 (enrdf_load_stackoverflow) 1987-09-02

Family

ID=13170554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6141980A Granted JPS56157066A (en) 1980-05-09 1980-05-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56157066A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6730581B2 (en) 1997-11-28 2004-05-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0323697A (ja) * 1989-06-21 1991-01-31 Matsushita Electric Ind Co Ltd 電気部品のリード線切断成形方法および装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6730581B2 (en) 1997-11-28 2004-05-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacture thereof

Also Published As

Publication number Publication date
JPS6241429B2 (enrdf_load_stackoverflow) 1987-09-02

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