JPS56155635A - Apparatus for oxide film growth in vacuum cvd process - Google Patents
Apparatus for oxide film growth in vacuum cvd processInfo
- Publication number
- JPS56155635A JPS56155635A JP5970980A JP5970980A JPS56155635A JP S56155635 A JPS56155635 A JP S56155635A JP 5970980 A JP5970980 A JP 5970980A JP 5970980 A JP5970980 A JP 5970980A JP S56155635 A JPS56155635 A JP S56155635A
- Authority
- JP
- Japan
- Prior art keywords
- feed nozzles
- oxide film
- reactive gas
- oxygen
- gas feed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5970980A JPS56155635A (en) | 1980-05-06 | 1980-05-06 | Apparatus for oxide film growth in vacuum cvd process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5970980A JPS56155635A (en) | 1980-05-06 | 1980-05-06 | Apparatus for oxide film growth in vacuum cvd process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56155635A true JPS56155635A (en) | 1981-12-01 |
| JPS6217852B2 JPS6217852B2 (cs) | 1987-04-20 |
Family
ID=13121004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5970980A Granted JPS56155635A (en) | 1980-05-06 | 1980-05-06 | Apparatus for oxide film growth in vacuum cvd process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56155635A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186933U (cs) * | 1984-11-13 | 1986-06-07 | ||
| JP2005311301A (ja) * | 2004-03-24 | 2005-11-04 | Tokyo Electron Ltd | 被処理体の酸化方法、酸化装置及び記憶媒体 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125974A (en) * | 1978-03-24 | 1979-09-29 | Hitachi Ltd | Low-tension cvd device |
-
1980
- 1980-05-06 JP JP5970980A patent/JPS56155635A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54125974A (en) * | 1978-03-24 | 1979-09-29 | Hitachi Ltd | Low-tension cvd device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186933U (cs) * | 1984-11-13 | 1986-06-07 | ||
| JP2005311301A (ja) * | 2004-03-24 | 2005-11-04 | Tokyo Electron Ltd | 被処理体の酸化方法、酸化装置及び記憶媒体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6217852B2 (cs) | 1987-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5777021A (en) | Manufacture of amorphous silicon | |
| JPS56155635A (en) | Apparatus for oxide film growth in vacuum cvd process | |
| JPS5391665A (en) | Plasma cvd device | |
| JPS5694751A (en) | Vapor growth method | |
| JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
| JPS56137639A (en) | Decompression vapor growth device | |
| JPS5260570A (en) | Vapor phase growing device | |
| JPS5680128A (en) | Manufacture of thin film | |
| JPS55110030A (en) | Method for vapor growth | |
| JPS6441211A (en) | Semiconductor growth device | |
| JPS5328097A (en) | Controlling method for pressure inside hydrogen producing apparatus | |
| JPS57138128A (en) | Cvd device | |
| JPS5358761A (en) | Vapor phase growth apparatus | |
| JPS52110273A (en) | Method and apparatus for exhausting hydrogen | |
| JPS5754329A (en) | Decompressed vapor-phase growing device | |
| JPS5493357A (en) | Growing method of polycrystal silicon | |
| JPS57175797A (en) | Epitaxial growth under reduced pressure | |
| JPS533062A (en) | Semiconductor crystal growth apparatus | |
| JPS5591815A (en) | Silicon epitaxial growth | |
| JPS5513969A (en) | Device for gaseous-phase growing | |
| JPS5481067A (en) | Impurity diffusing method for semiconductor | |
| JPS5224165A (en) | Process for growth of ribbon crystal by horizontal drawing | |
| JPS5267260A (en) | Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
| JPS573711A (en) | Production of trichlorosilane | |
| JPS5263669A (en) | Device for production of semiconductors |