JPS56155564A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS56155564A JPS56155564A JP5467880A JP5467880A JPS56155564A JP S56155564 A JPS56155564 A JP S56155564A JP 5467880 A JP5467880 A JP 5467880A JP 5467880 A JP5467880 A JP 5467880A JP S56155564 A JPS56155564 A JP S56155564A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- memory
- pulse voltage
- substrate
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000969 carrier Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain a semiconductor temporary memory device which appreciably increased integration density by composing a memory cell of single element. CONSTITUTION:A pulse voltage is applied across an electrode 7 in an N type substrate 1 and an electrode 6 in a P type layer 2 in the forward direction. With an electrode 5 on an SiO2 thin film 4 kept at predetermined electric potential, minor carriers injected in the substrate 1 are held and stored under the film 4. The carriers can be erased by a reverse pulse voltage for writing. Next, with the electrode 5 and the substrate 1 kept at the same electric potential by applying a reverse pulse voltage across the electrodes 6, 7, a current flows into the electrode 6 to read the memory. And memory status is held by re-injecting minor carriers after reading. In this composition, as memory is possible by one element, integration will appreciably be improved if the device is applied to IC. And a high-speed operating memory device will be obtained as the minor carriers are moved by applying forward and reverse bias to a P-N junction or a Schottky junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55054678A JPS5834944B2 (en) | 1980-04-24 | 1980-04-24 | semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55054678A JPS5834944B2 (en) | 1980-04-24 | 1980-04-24 | semiconductor storage device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7412371A Division JPS5639058B2 (en) | 1971-09-21 | 1971-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56155564A true JPS56155564A (en) | 1981-12-01 |
| JPS5834944B2 JPS5834944B2 (en) | 1983-07-29 |
Family
ID=12977440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55054678A Expired JPS5834944B2 (en) | 1980-04-24 | 1980-04-24 | semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834944B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100503936B1 (en) * | 2001-08-22 | 2005-07-27 | 미쓰비시덴키 가부시키가이샤 | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0525296U (en) * | 1991-09-05 | 1993-04-02 | 株式会社三ツ葉電機製作所 | Insulation structure of furnace wall of heating furnace |
-
1980
- 1980-04-24 JP JP55054678A patent/JPS5834944B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100503936B1 (en) * | 2001-08-22 | 2005-07-27 | 미쓰비시덴키 가부시키가이샤 | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5834944B2 (en) | 1983-07-29 |
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