JPS56150878A - Semiconductor image pickup device - Google Patents

Semiconductor image pickup device

Info

Publication number
JPS56150878A
JPS56150878A JP5400180A JP5400180A JPS56150878A JP S56150878 A JPS56150878 A JP S56150878A JP 5400180 A JP5400180 A JP 5400180A JP 5400180 A JP5400180 A JP 5400180A JP S56150878 A JPS56150878 A JP S56150878A
Authority
JP
Japan
Prior art keywords
layer
region
type
high resistance
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5400180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6117150B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Tadahiro Omi
Naoshige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP5400180A priority Critical patent/JPS56150878A/ja
Priority to DE8181301732T priority patent/DE3167682D1/de
Priority to EP81301732A priority patent/EP0038697B1/en
Publication of JPS56150878A publication Critical patent/JPS56150878A/ja
Publication of JPS6117150B2 publication Critical patent/JPS6117150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP5400180A 1980-04-22 1980-04-22 Semiconductor image pickup device Granted JPS56150878A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5400180A JPS56150878A (en) 1980-04-22 1980-04-22 Semiconductor image pickup device
DE8181301732T DE3167682D1 (en) 1980-04-22 1981-04-21 Semiconductor image sensor
EP81301732A EP0038697B1 (en) 1980-04-22 1981-04-21 Semiconductor image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5400180A JPS56150878A (en) 1980-04-22 1980-04-22 Semiconductor image pickup device

Publications (2)

Publication Number Publication Date
JPS56150878A true JPS56150878A (en) 1981-11-21
JPS6117150B2 JPS6117150B2 (enrdf_load_stackoverflow) 1986-05-06

Family

ID=12958354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5400180A Granted JPS56150878A (en) 1980-04-22 1980-04-22 Semiconductor image pickup device

Country Status (1)

Country Link
JP (1) JPS56150878A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001076A1 (fr) * 1982-09-09 1984-03-15 Fuji Photo Film Co Ltd Dispositif de prise d'image a semiconducteurs
US4731665A (en) * 1984-12-28 1988-03-15 Canon Kabushiki Kaisha Image sensing apparatus with read-out of selected combinations of lines
US4737832A (en) * 1985-04-01 1988-04-12 Canon Kabushiki Kaisha Optical signal processor
EP0391502A2 (en) 1983-07-02 1990-10-10 Canon Kabushiki Kaisha Photoelectric converter
EP1453099A3 (en) * 2003-02-26 2006-06-28 Dialog Semiconductor Vertical charge transfer active pixel sensor
US7256386B2 (en) 2000-04-20 2007-08-14 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001076A1 (fr) * 1982-09-09 1984-03-15 Fuji Photo Film Co Ltd Dispositif de prise d'image a semiconducteurs
US4673985A (en) * 1982-09-09 1987-06-16 Fuji Photo Film Co., Ltd. Semiconductor image sensor
EP0391502A2 (en) 1983-07-02 1990-10-10 Canon Kabushiki Kaisha Photoelectric converter
US4731665A (en) * 1984-12-28 1988-03-15 Canon Kabushiki Kaisha Image sensing apparatus with read-out of selected combinations of lines
US4816910A (en) * 1984-12-28 1989-03-28 Canon Kabushiki Kaisha Image sensing apparatus
US4737832A (en) * 1985-04-01 1988-04-12 Canon Kabushiki Kaisha Optical signal processor
US7256386B2 (en) 2000-04-20 2007-08-14 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
US7297927B2 (en) 2000-04-20 2007-11-20 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
US7417216B2 (en) 2000-04-20 2008-08-26 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
EP1453099A3 (en) * 2003-02-26 2006-06-28 Dialog Semiconductor Vertical charge transfer active pixel sensor

Also Published As

Publication number Publication date
JPS6117150B2 (enrdf_load_stackoverflow) 1986-05-06

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