JPS5615031A - Molecular beam epitaxial growing apparatus - Google Patents

Molecular beam epitaxial growing apparatus

Info

Publication number
JPS5615031A
JPS5615031A JP9060179A JP9060179A JPS5615031A JP S5615031 A JPS5615031 A JP S5615031A JP 9060179 A JP9060179 A JP 9060179A JP 9060179 A JP9060179 A JP 9060179A JP S5615031 A JPS5615031 A JP S5615031A
Authority
JP
Japan
Prior art keywords
substrate
manipulator
gate valve
retaining
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9060179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63938B2 (enrdf_load_stackoverflow
Inventor
Seiichi Nagata
Tsuneo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9060179A priority Critical patent/JPS5615031A/ja
Publication of JPS5615031A publication Critical patent/JPS5615031A/ja
Publication of JPS63938B2 publication Critical patent/JPS63938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP9060179A 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus Granted JPS5615031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9060179A JPS5615031A (en) 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9060179A JPS5615031A (en) 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus

Publications (2)

Publication Number Publication Date
JPS5615031A true JPS5615031A (en) 1981-02-13
JPS63938B2 JPS63938B2 (enrdf_load_stackoverflow) 1988-01-09

Family

ID=14002984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9060179A Granted JPS5615031A (en) 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus

Country Status (1)

Country Link
JP (1) JPS5615031A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207331A (en) * 1981-06-15 1982-12-20 Canon Inc Manufacture of semiconductor device
US4508590A (en) * 1983-09-16 1985-04-02 Raphael Kaplan Method for the deposition of high-quality crystal epitaxial films of iron
JPS6183699A (ja) * 1984-09-28 1986-04-28 Hitachi Ltd 分子線エピタキシ装置
JPH035395A (ja) * 1989-05-31 1991-01-11 Hitachi Ltd Ｍｂｅ装置及びその運転方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404661A (en) * 1965-08-26 1968-10-08 Sperry Rand Corp Evaporation system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404661A (en) * 1965-08-26 1968-10-08 Sperry Rand Corp Evaporation system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207331A (en) * 1981-06-15 1982-12-20 Canon Inc Manufacture of semiconductor device
US4508590A (en) * 1983-09-16 1985-04-02 Raphael Kaplan Method for the deposition of high-quality crystal epitaxial films of iron
JPS6183699A (ja) * 1984-09-28 1986-04-28 Hitachi Ltd 分子線エピタキシ装置
JPH035395A (ja) * 1989-05-31 1991-01-11 Hitachi Ltd Ｍｂｅ装置及びその運転方法

Also Published As

Publication number Publication date
JPS63938B2 (enrdf_load_stackoverflow) 1988-01-09

Similar Documents

Publication Publication Date Title
DE69415729T2 (de) Verfahren zur Begrenzung des Haftens eines Körpers am Träger bei einer Abscheidungs-Behandlung
EP0343530A3 (de) Vakuumanlage
JPS5729577A (en) Automatic continuous sputtering apparatus
CA2028438A1 (en) Selective area chemical vapor deposition
ATE102295T1 (de) Vorrichtung und verfahren zur erzeugung eines vakuums.
JPS5754269A (en) Apparatus for forming film in vacuum
ATE246317T1 (de) Verfahren zum betrieb einer mehrkammer- vakuumanlage
JPS5615031A (en) Molecular beam epitaxial growing apparatus
US5025751A (en) Solid film growth apparatus
ES479438A1 (es) Procedimiento de colocacion de un manguito de envainado.
JPS55102237A (en) Method and apparatus for plasma processing
JPS5519842A (en) Thin film growing device under vacuum
JPS5320763A (en) Crystal growing method and apparatus
JPS544061A (en) Test piece chamber for electronic microscope or the like
ATE58184T1 (de) Vorrichtung zum aufstaeuben duenner schichten auf ein substrat.
JPS5521553A (en) Device for fabricating film
JPS6422023A (en) Manufacture of semiconductor and semiconductor production device used for said manufacture
JPH03191063A (ja) 連続式スパッタリング装置
JPS56130470A (en) Sputtering apparatus
JPS56107550A (en) Molecular beam crystal growing process
JPS551866A (en) Method and apparatus for forming uniform film on thin base plate
JPS5621637A (en) Vacuum treatment equipment
JPS6410622A (en) Method of growing amorphous substance
JPS57107235A (en) Vacuum vapor growth device
JPS571140A (en) Plate take-out apparatus