JPS56144531A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56144531A
JPS56144531A JP4734680A JP4734680A JPS56144531A JP S56144531 A JPS56144531 A JP S56144531A JP 4734680 A JP4734680 A JP 4734680A JP 4734680 A JP4734680 A JP 4734680A JP S56144531 A JPS56144531 A JP S56144531A
Authority
JP
Japan
Prior art keywords
layer
scribed lines
insulating film
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4734680A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4734680A priority Critical patent/JPS56144531A/en
Priority to US06/240,130 priority patent/US4381201A/en
Priority to EP81101579A priority patent/EP0036137B1/en
Priority to DE8181101579T priority patent/DE3168424D1/en
Publication of JPS56144531A publication Critical patent/JPS56144531A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

Abstract

PURPOSE:To facilitate die separation after the completion of a semiconductor device by previously forming grooves along scribed lines on an insulating film formed on a semiconductor substrate. CONSTITUTION:Patterning is applied to an SiO2 insulating film 2 formed on an Si semiconductor substrate 1 and articles existing on scribed lines are removed to form grooves 2A. Next, a poly crystalline Si layer 3 is formed on the substrate 1. Next, the layer 3 is irradiated by a laser beam for annealing and the layer 3 is converted into a monocrystal Si layer 3'. After that, necessary semiconductor elements are formed on the layer 3'. Next, the semiconductor device under completed wafer state is cut along the scribed lines to separate the device into each chip. In this case, no insulating film 2 exists on the scribed lines. Therefore, cutting is extremely easy.
JP4734680A 1980-03-11 1980-04-10 Manufacture of semiconductor device Pending JPS56144531A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4734680A JPS56144531A (en) 1980-04-10 1980-04-10 Manufacture of semiconductor device
US06/240,130 US4381201A (en) 1980-03-11 1981-03-03 Method for production of semiconductor devices
EP81101579A EP0036137B1 (en) 1980-03-11 1981-03-05 Method for production of semiconductor devices
DE8181101579T DE3168424D1 (en) 1980-03-11 1981-03-05 Method for production of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4734680A JPS56144531A (en) 1980-04-10 1980-04-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56144531A true JPS56144531A (en) 1981-11-10

Family

ID=12772589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4734680A Pending JPS56144531A (en) 1980-03-11 1980-04-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56144531A (en)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS=1980 *

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