JPS56143594A - Semiconductor storage circuit - Google Patents

Semiconductor storage circuit

Info

Publication number
JPS56143594A
JPS56143594A JP4676380A JP4676380A JPS56143594A JP S56143594 A JPS56143594 A JP S56143594A JP 4676380 A JP4676380 A JP 4676380A JP 4676380 A JP4676380 A JP 4676380A JP S56143594 A JPS56143594 A JP S56143594A
Authority
JP
Japan
Prior art keywords
cell
write
information
readout
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4676380A
Other languages
Japanese (ja)
Other versions
JPS6118835B2 (en
Inventor
Yasunobu Inabe
Toshio Hayashi
Kuniyasu Kawarada
Masao Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4676380A priority Critical patent/JPS56143594A/en
Publication of JPS56143594A publication Critical patent/JPS56143594A/en
Publication of JPS6118835B2 publication Critical patent/JPS6118835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To shorten the time required to write information in a memory cell, by reducing a readout current flowing out of the cell to a bit line right before the information is written in the storage cell. CONSTITUTION:If times t1-t3 when information readout/write-in control signal WE arrives at terminals T1-T3 are compared mutually, t1 and t2 are found later than t3 by the time when signal WE passes through one stage of a gate forming OR. Namely, when the cell is changed over from an information readout state to a write-in state, the readout current flowing through transistor Q5 or Q6 decreases toward zero, and next a write-in current flows through Q5 or Q6 after the time equivalent to the delay of one gate stage. A small number of carriers stored at the base of an ON-stage transistor of the cell right before writing operation are reduced cmparing with the time of read-out.
JP4676380A 1980-04-11 1980-04-11 Semiconductor storage circuit Granted JPS56143594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4676380A JPS56143594A (en) 1980-04-11 1980-04-11 Semiconductor storage circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4676380A JPS56143594A (en) 1980-04-11 1980-04-11 Semiconductor storage circuit

Publications (2)

Publication Number Publication Date
JPS56143594A true JPS56143594A (en) 1981-11-09
JPS6118835B2 JPS6118835B2 (en) 1986-05-14

Family

ID=12756367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4676380A Granted JPS56143594A (en) 1980-04-11 1980-04-11 Semiconductor storage circuit

Country Status (1)

Country Link
JP (1) JPS56143594A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11371529B2 (en) 2015-08-31 2022-06-28 Ziehl-Abegg Se Fan wheel, fan, and system having at least one fan

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11371529B2 (en) 2015-08-31 2022-06-28 Ziehl-Abegg Se Fan wheel, fan, and system having at least one fan

Also Published As

Publication number Publication date
JPS6118835B2 (en) 1986-05-14

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