JPS56143590A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56143590A
JPS56143590A JP4624980A JP4624980A JPS56143590A JP S56143590 A JPS56143590 A JP S56143590A JP 4624980 A JP4624980 A JP 4624980A JP 4624980 A JP4624980 A JP 4624980A JP S56143590 A JPS56143590 A JP S56143590A
Authority
JP
Japan
Prior art keywords
signal
level
memory
power source
unselected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4624980A
Other languages
Japanese (ja)
Inventor
Yutaka Kumagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP4624980A priority Critical patent/JPS56143590A/en
Publication of JPS56143590A publication Critical patent/JPS56143590A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Abstract

PURPOSE:To make zero the power consumption of a CMOS semiconductor memory by controlling so that the power source current becomes minimum by a memory-chip nonselection signal regardless of an input signal level when the memory is unselected. CONSTITUTION:When the memory is unselected, namely, when selection signal CS' is held at the high level, the inverter circuit consisting of transistors(TR) Q15 and Q16 holds control signal phic at the low level. In signal input circuit 1, p channel TR Q13 is conducted and n channel Q14 is cut off. Therefore, coupling point P3 is held at the high level regardless of the voltage level of input signal A and the inverter circuit consisting of Q11 and Q12 holds output point P2 at the low level. The level at coupling point P3 is equal to that of power source voltage V and Q11 and Q14 are both cut off, so no power source current flows through signal input circuit 1, making the power consumption zero.
JP4624980A 1980-04-10 1980-04-10 Semiconductor memory device Pending JPS56143590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4624980A JPS56143590A (en) 1980-04-10 1980-04-10 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4624980A JPS56143590A (en) 1980-04-10 1980-04-10 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS56143590A true JPS56143590A (en) 1981-11-09

Family

ID=12741877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4624980A Pending JPS56143590A (en) 1980-04-10 1980-04-10 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56143590A (en)

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