JPS56142642A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56142642A
JPS56142642A JP4470580A JP4470580A JPS56142642A JP S56142642 A JPS56142642 A JP S56142642A JP 4470580 A JP4470580 A JP 4470580A JP 4470580 A JP4470580 A JP 4470580A JP S56142642 A JPS56142642 A JP S56142642A
Authority
JP
Japan
Prior art keywords
silicon dioxide
film
flow rate
ratio
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4470580A
Other languages
English (en)
Inventor
Toshiji Yamauchi
Isao Tachikake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4470580A priority Critical patent/JPS56142642A/ja
Publication of JPS56142642A publication Critical patent/JPS56142642A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
JP4470580A 1980-04-07 1980-04-07 Manufacture of semiconductor device Pending JPS56142642A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4470580A JPS56142642A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4470580A JPS56142642A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56142642A true JPS56142642A (en) 1981-11-07

Family

ID=12698827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4470580A Pending JPS56142642A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142642A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111368A (ja) * 1982-12-17 1984-06-27 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPS61245560A (ja) * 1985-04-23 1986-10-31 Agency Of Ind Science & Technol 半導体集積回路用キヤバシタ
JPH04229537A (ja) * 1990-05-16 1992-08-19 Philips Gloeilampenfab:Nv 二色性ミラーを使用した短焦点距離ビデオカラー投影機
JPH06310504A (ja) * 1993-04-27 1994-11-04 Nec Corp 絶縁膜の構造とその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421289A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Manufacture for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421289A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Manufacture for semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111368A (ja) * 1982-12-17 1984-06-27 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPS61245560A (ja) * 1985-04-23 1986-10-31 Agency Of Ind Science & Technol 半導体集積回路用キヤバシタ
JPH04229537A (ja) * 1990-05-16 1992-08-19 Philips Gloeilampenfab:Nv 二色性ミラーを使用した短焦点距離ビデオカラー投影機
JPH06310504A (ja) * 1993-04-27 1994-11-04 Nec Corp 絶縁膜の構造とその製造方法

Similar Documents

Publication Publication Date Title
EP0406434B1 (en) Dry-etching method
AU3994785A (en) Method and apparatus for the gas jet deposition of conductingand dielectric thin solid films and products produced there by
JPS56142642A (en) Manufacture of semiconductor device
Agnello et al. Conditions for an Oxide‐Free Si Surface for Low‐Temperature Processing: Steady‐State Boundary
Young et al. Preparation of germanium nitride films by low pressure chemical vapor deposition
GB1223707A (en) Method for etching single crystal silicon substrates and depositing silicon thereon
JPS5654049A (en) Semiconductor device
JPS56121632A (en) Film formation
JPS5543882A (en) Gaseous-phase growing of compound semiconductor epitaxial film
JPS5648237A (en) Evacuated gaseous phase reactor
JPS6414926A (en) Manufacture of semiconductor device
JPS57159017A (en) Manufacture of semiconductor single crystal film
JPS5547381A (en) Plasma etching method
JPS5796567A (en) Manufacture of semiconductor device
JPS6410616A (en) Method and device for growth of compound semiconductor crystal
JPS649626A (en) Semiconductor device
JPS5553415A (en) Selective epitaxial growing
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5493357A (en) Growing method of polycrystal silicon
JPS5556096A (en) Vapor phase growing method
JPS57160907A (en) Manufacture of amorphous silicon containing fluorine
SU1093175A1 (ru) Способ получени структур кремний-двуокись кремни -нитрид кремни
JPS5591815A (en) Silicon epitaxial growth
JPS5461463A (en) Vapor phase growth method for semiconductor
JPS57111081A (en) Semiconductor light-emitting element