JPS56138335A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS56138335A
JPS56138335A JP3261681A JP3261681A JPS56138335A JP S56138335 A JPS56138335 A JP S56138335A JP 3261681 A JP3261681 A JP 3261681A JP 3261681 A JP3261681 A JP 3261681A JP S56138335 A JPS56138335 A JP S56138335A
Authority
JP
Japan
Prior art keywords
circuit
fet1
taken
integrated circuit
fet3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3261681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6341451B2 (enrdf_load_stackoverflow
Inventor
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3261681A priority Critical patent/JPS56138335A/ja
Publication of JPS56138335A publication Critical patent/JPS56138335A/ja
Publication of JPS6341451B2 publication Critical patent/JPS6341451B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
JP3261681A 1981-03-09 1981-03-09 Integrated circuit Granted JPS56138335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3261681A JPS56138335A (en) 1981-03-09 1981-03-09 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3261681A JPS56138335A (en) 1981-03-09 1981-03-09 Integrated circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12060572A Division JPS5631744B2 (enrdf_load_stackoverflow) 1972-12-04 1972-12-04

Publications (2)

Publication Number Publication Date
JPS56138335A true JPS56138335A (en) 1981-10-28
JPS6341451B2 JPS6341451B2 (enrdf_load_stackoverflow) 1988-08-17

Family

ID=12363782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3261681A Granted JPS56138335A (en) 1981-03-09 1981-03-09 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS56138335A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256531A (ja) * 1986-04-25 1987-11-09 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション デジタル論理駆動回路
NL9400830A (nl) * 1993-05-20 1994-12-16 Fuji Electric Co Ltd Halfgeleiderveldeffecttransistor met geisoleerde poortelectrode, werkend met een lage poortelectrodespanning en hoge afvoer- en aanvoerelectrodespanningen.
JP2002374158A (ja) * 2001-06-14 2002-12-26 Fuji Electric Co Ltd 高耐圧出力回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700981A (en) * 1970-05-27 1972-10-24 Hitachi Ltd Semiconductor integrated circuit composed of cascade connection of inverter circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700981A (en) * 1970-05-27 1972-10-24 Hitachi Ltd Semiconductor integrated circuit composed of cascade connection of inverter circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256531A (ja) * 1986-04-25 1987-11-09 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション デジタル論理駆動回路
NL9400830A (nl) * 1993-05-20 1994-12-16 Fuji Electric Co Ltd Halfgeleiderveldeffecttransistor met geisoleerde poortelectrode, werkend met een lage poortelectrodespanning en hoge afvoer- en aanvoerelectrodespanningen.
JP2002374158A (ja) * 2001-06-14 2002-12-26 Fuji Electric Co Ltd 高耐圧出力回路

Also Published As

Publication number Publication date
JPS6341451B2 (enrdf_load_stackoverflow) 1988-08-17

Similar Documents

Publication Publication Date Title
JPS55136726A (en) High voltage mos inverter and its drive method
JPS5690555A (en) Semiconductor integrated circuit
EP0578821A4 (en) Semiconductor device
KR900004108A (ko) 파워 mos 트랜지스터가 구비된 모놀리딕 쌍방향 스위치
JPS56108258A (en) Semiconductor device
EP0784345A3 (en) Switching circuit comprising field effect transistors
KR870006721A (ko) 반도체 전자회로
EP0270219A2 (en) Reduced parallel EXCLUSIVE OR and EXCLUSIVE NOR gate
KR880004638A (ko) 차동 회로
EP0203384A3 (en) Multiple input circuit for field effect transistors
JPS56138335A (en) Integrated circuit
EP0385524A3 (en) Monolithic integrated structure for a two-stage driving system with level translator circuit component of the driving signal for power transistors
JPS56112666A (en) Semiconductor integrated circuit
JPS54133061A (en) Current switch circuit
SU1097139A1 (ru) Полевой транзистор
EP0006531A3 (en) Push-pull driver circuit and its use in a programmed logic array
JPS57157638A (en) Phase inversion changeover circuit
JPS55105378A (en) Negative resistance semiconductor element
JPS5586222A (en) Level shift circuit
JPS6459958A (en) Vertical field-effect transistor
WO2000024060A3 (de) Halbleiterschalter mit gleichmässig verteilten feinen steuerstrukturen
JPS57160370A (en) Feed circuit for load
JPS56137649A (en) Semiconductor device
JPS5789260A (en) Semiconductor logic circuit
JPS54108256A (en) Stabilized electric source circuit