JPS5514718A - Mos transistor circuit - Google Patents

Mos transistor circuit

Info

Publication number
JPS5514718A
JPS5514718A JP8697878A JP8697878A JPS5514718A JP S5514718 A JPS5514718 A JP S5514718A JP 8697878 A JP8697878 A JP 8697878A JP 8697878 A JP8697878 A JP 8697878A JP S5514718 A JPS5514718 A JP S5514718A
Authority
JP
Japan
Prior art keywords
amplifier
fet1
signal
voltage
fet5
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8697878A
Other languages
Japanese (ja)
Inventor
Yasutaka Nakasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8697878A priority Critical patent/JPS5514718A/en
Publication of JPS5514718A publication Critical patent/JPS5514718A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To secure the variable amplification factor for the amplifier by applying the input signal to one side of the amplifier and the signal voltage-divided between the input signal and the specified voltage level to the other side respectively when the differential amplifier is constituted with MOSFET. CONSTITUTION:The amplifier consists of P-channel MOSFET1 and 2 plus N- channel MOSFET3-5, and plus power source VDD and minus power source VSS are connected to the side of FET1 and 2 and the side of FET5 each. At the same time, bias level VS is applied to FET1 and 2 with VS' applied FET5 respectively. Furthermore, input VIN to be applied to FET3 and bias level VG are connected via resistance 8, and output Vout1 and Vout2 are drawn out from FET1 and 4 respectively. In such constitution, the resistance 8 value is controlled by the output of FET4. As a result, input VIN turns to the voltage-divided signal, thus securing the varying amplification factor for the amplifier.
JP8697878A 1978-07-17 1978-07-17 Mos transistor circuit Pending JPS5514718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8697878A JPS5514718A (en) 1978-07-17 1978-07-17 Mos transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8697878A JPS5514718A (en) 1978-07-17 1978-07-17 Mos transistor circuit

Publications (1)

Publication Number Publication Date
JPS5514718A true JPS5514718A (en) 1980-02-01

Family

ID=13901954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8697878A Pending JPS5514718A (en) 1978-07-17 1978-07-17 Mos transistor circuit

Country Status (1)

Country Link
JP (1) JPS5514718A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122404A (en) * 1985-11-22 1987-06-03 Nec Corp Differential amplifier
US4891138A (en) * 1986-12-25 1990-01-02 Ebara Corporation Method of separating and transferring ion-exchange resin
JPH04100587A (en) * 1990-08-20 1992-04-02 Ebara Infilco Co Ltd Method and device for determining anion-exchange resin amount in mixed fluid desalting apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4421049Y1 (en) * 1965-11-26 1969-09-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4421049Y1 (en) * 1965-11-26 1969-09-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122404A (en) * 1985-11-22 1987-06-03 Nec Corp Differential amplifier
US4891138A (en) * 1986-12-25 1990-01-02 Ebara Corporation Method of separating and transferring ion-exchange resin
JPH04100587A (en) * 1990-08-20 1992-04-02 Ebara Infilco Co Ltd Method and device for determining anion-exchange resin amount in mixed fluid desalting apparatus

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