JPS56137686A - Mis-type photoelectric transducing device - Google Patents

Mis-type photoelectric transducing device

Info

Publication number
JPS56137686A
JPS56137686A JP4140080A JP4140080A JPS56137686A JP S56137686 A JPS56137686 A JP S56137686A JP 4140080 A JP4140080 A JP 4140080A JP 4140080 A JP4140080 A JP 4140080A JP S56137686 A JPS56137686 A JP S56137686A
Authority
JP
Japan
Prior art keywords
semiconductor
photoelectric transducing
light
type
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4140080A
Other languages
Japanese (ja)
Other versions
JPH0324072B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP4140080A priority Critical patent/JPS56137686A/en
Publication of JPS56137686A publication Critical patent/JPS56137686A/en
Priority to JP2266108A priority patent/JPH03209780A/en
Publication of JPH0324072B2 publication Critical patent/JPH0324072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve photoelectric transducing efficiency by providing a number of V-type structures on the front and back surfaces of a semiconductor and by forming an MIS structure on these V-type front and back surfaces. CONSTITUTION:V-type grooves 8 and 9 are formed on both surfaces of the semiconductor 1. On the surfaces of these grooves 8 and 9 are formed insulation or half- insulation films 6 and 12 having the thickness which can allow tunnel current to flow. Next, a film of metal having a small work function, such as, for instance, Al or Mg, is formed on the back surface, thereon an Alfilm is formed and thus an electrode 4 of multilayer structure is formed, while an electrode of a Pt film 2 is formed on the front surface. By such a constitution, the efficiency of transmission of light is improved when the light 5 transmits the semiconductor 1 from the outside air, while the V-type grooves reflect the light in the semiconductor efficiently to each other. Moreover, since the difference in the work function between Pt and Mg is large, the photoelectric transducing efficiency can further be improved.
JP4140080A 1980-03-31 1980-03-31 Mis-type photoelectric transducing device Granted JPS56137686A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4140080A JPS56137686A (en) 1980-03-31 1980-03-31 Mis-type photoelectric transducing device
JP2266108A JPH03209780A (en) 1980-03-31 1990-10-03 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4140080A JPS56137686A (en) 1980-03-31 1980-03-31 Mis-type photoelectric transducing device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2266108A Division JPH03209780A (en) 1980-03-31 1990-10-03 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS56137686A true JPS56137686A (en) 1981-10-27
JPH0324072B2 JPH0324072B2 (en) 1991-04-02

Family

ID=12607320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4140080A Granted JPS56137686A (en) 1980-03-31 1980-03-31 Mis-type photoelectric transducing device

Country Status (1)

Country Link
JP (1) JPS56137686A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108347A (en) * 1982-12-14 1984-06-22 Agency Of Ind Science & Technol Electrode being in ohmic-contact with semiconductor
JPH02220479A (en) * 1989-02-22 1990-09-03 Hitachi Ltd Photoelectric transducer and manufacture thereof
JPH0371677A (en) * 1989-08-10 1991-03-27 Sharp Corp Processing of substrate for photoelectric conversion device
JP2007115806A (en) * 2005-10-19 2007-05-10 Sumitomo Metal Mining Co Ltd Solar cell using carbon nanotube

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108347A (en) * 1982-12-14 1984-06-22 Agency Of Ind Science & Technol Electrode being in ohmic-contact with semiconductor
JPH0578192B2 (en) * 1982-12-14 1993-10-28 Kogyo Gijutsuin
JPH02220479A (en) * 1989-02-22 1990-09-03 Hitachi Ltd Photoelectric transducer and manufacture thereof
JPH0371677A (en) * 1989-08-10 1991-03-27 Sharp Corp Processing of substrate for photoelectric conversion device
JP2007115806A (en) * 2005-10-19 2007-05-10 Sumitomo Metal Mining Co Ltd Solar cell using carbon nanotube
JP4720426B2 (en) * 2005-10-19 2011-07-13 住友金属鉱山株式会社 Solar cell using carbon nanotubes

Also Published As

Publication number Publication date
JPH0324072B2 (en) 1991-04-02

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